Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim Seong Il | - |
dc.contributor.author | Min Suk-Ki | - |
dc.contributor.author | KIM YOUN | - |
dc.contributor.author | KIM MOO SUNG | - |
dc.contributor.author | EOM KYUNG SOOK | - |
dc.contributor.author | 김현수 | - |
dc.date.accessioned | 2024-01-13T23:04:00Z | - |
dc.date.available | 2024-01-13T23:04:00Z | - |
dc.date.created | 2021-09-29 | - |
dc.identifier.uri | https://pubs.kist.re.kr/handle/201004/112536 | - |
dc.language | English | - |
dc.subject | MOCVD | - |
dc.subject | GaAs | - |
dc.subject | AlGaAs | - |
dc.subject | HEMT | - |
dc.subject | delta doping | - |
dc.title | Fabrication of HEMT employing delta-doping layer grown by MOCVD. | - |
dc.type | Conference | - |
dc.description.journalClass | 2 | - |
dc.identifier.bibliographicCitation | Bull. Korean phys. soc., v.v. 9, no.no. 1, pp.101 - ? | - |
dc.citation.title | Bull. Korean phys. soc. | - |
dc.citation.volume | v. 9 | - |
dc.citation.number | no. 1 | - |
dc.citation.startPage | 101 | - |
dc.citation.endPage | ? | - |
dc.citation.conferencePlace | KO | - |
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