DSpace at KISTKIST Conference PaperOthers

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dc.contributor.authorKANG KWANG NHAM-
dc.contributor.authorLee Jung Il-
dc.contributor.authorKIM YOUN-
dc.contributor.authorHan Il Ki-
dc.contributor.authorMin Suk-Ki-
dc.contributor.authorY. J. Lee-
dc.date.accessioned2024-01-13T23:31:20Z-
dc.date.available2024-01-13T23:31:20Z-
dc.date.created2021-09-29-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/112641-
dc.languageEnglish-
dc.subjectGaAs MESFET-
dc.titleFabrication and characterization of homostructure GaAs δ -doped FETs.-
dc.typeConference-
dc.description.journalClass2-
dc.identifier.bibliographicCitationSeoul-ISPSA '90, Yonsei University, Seoul, Aug. 20-21, 1990, pp.?-
dc.citation.titleSeoul-ISPSA '90, Yonsei University, Seoul, Aug. 20-21, 1990-
dc.citation.startPage?-
dc.citation.endPage?-
dc.citation.conferencePlaceKO-
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