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dc.contributor.authorKANG KWANG NHAM-
dc.contributor.authorYoo Jong Lee-
dc.contributor.authorEOM KYUNG SOOK-
dc.contributor.authorKIM MOO SUNG-
dc.date.accessioned2024-01-13T23:33:59Z-
dc.date.available2024-01-13T23:33:59Z-
dc.date.created2021-09-29-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/112797-
dc.languageEnglish-
dc.subjectGaAs MESFET-
dc.titleDC characteristics of submicron gate normally-on and normally-off MESFETs on VPE and MOCVD GaAs.-
dc.title.alternativeVPE 및 MOCVD 법으로 성장된 submicron 게이트 normally-on, normall-off GaAs MESFET 의 DC 특성 =-
dc.typeConference-
dc.description.journalClass2-
dc.identifier.bibliographicCitation전기재료 , 반도체 및 CAD 학술대회 논문집, pp.115 - ?-
dc.citation.title전기재료 , 반도체 및 CAD 학술대회 논문집-
dc.citation.startPage115-
dc.citation.endPage?-
dc.citation.conferencePlaceKO-
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