DSpace at KISTKIST Conference PaperOthers

Full metadata record

DC Field Value Language
dc.contributor.authorJu Byeong Kwon-
dc.contributor.authorJ. H. Ki-
dc.contributor.authorC. J. Kim-
dc.date.accessioned2024-01-13T23:34:32Z-
dc.date.available2024-01-13T23:34:32Z-
dc.date.created2021-09-29-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/112829-
dc.languageEnglish-
dc.subjectsilicon on insulator-
dc.subjectSOI device-
dc.titleCrystal growth of Si and BP on Si substrates using B2H6-PH3-H2 system-
dc.typeConference-
dc.description.journalClass2-
dc.identifier.bibliographicCitationInternational symposium on the physics of semiconductor and its application, Seoul, Korea., pp.?-
dc.citation.titleInternational symposium on the physics of semiconductor and its application, Seoul, Korea.-
dc.citation.startPage?-
dc.citation.endPage?-
dc.citation.conferencePlaceKO-
Appears in Collections:
KIST Conference Paper > Others
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML
Show Simple Item Record

qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE