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dc.contributor.authorPark, Jun-Hee-
dc.contributor.authorKim, Hong-Rae-
dc.contributor.authorKang, Min-Jung-
dc.contributor.authorSon, Dong Hee-
dc.contributor.authorPyun, Jae-Chul-
dc.date.accessioned2024-01-19T08:02:55Z-
dc.date.available2024-01-19T08:02:55Z-
dc.date.created2023-12-21-
dc.date.issued2024-01-
dc.identifier.issn1229-7801-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/113036-
dc.description.abstractPerovskites are semiconductor materials with the ABX3 structure, and they possess several attractive features, such as a tunable bandgap, high photoluminescence quantum yield (PLQY), charge mobility, and carrier lifetime. Hence, they are widely used in various applications, such as light-emitting devices, solar cells, and photosensors. However, the perovskite defects, including grain boundaries, vacancies, ion migration, and structural deformation, interfere with the effective performance of the perovskite-based devices. The intrinsic instability and trap states caused by the perovskite defects decrease the stability and performance of perovskite-based devices. Two methods of defect passivation are carried out to enhance the effectiveness of perovskite-based devices: (1) polymers and (2) chemical additives. Defect passivation protects the surface to increase stability and reduce trap states, thereby enhancing the performance of perovskite-based devices. This article reviews the technologies for defect passivation in perovskite-based devices. The effect of defect passivation has been analyzed using various methodologies: (1) surface analysis using atomic force microscopy (AFM) and scanning electron microscopy (SEM), (2) bandgap and charge carrier lifetime analysis using photoluminescence (PL) and time-resolved photoluminescence (TRPL) spectra, (3) the trap-state density calculations based on the I-V curve under dark conditions, and (4) comparison of the critical parameters of the perovskite-based devices. This review provides an overview of the defect passivation technologies available to enhance the stability and applicability of perovskite-based photosensors.-
dc.languageEnglish-
dc.publisher한국세라믹학회-
dc.titleTrends in defect passivation technologies for perovskite-based photosensor-
dc.typeArticle-
dc.identifier.doi10.1007/s43207-023-00347-9-
dc.description.journalClass1-
dc.identifier.bibliographicCitationJournal of The Korean Ceramic Society, v.61, no.1, pp.15 - 33-
dc.citation.titleJournal of The Korean Ceramic Society-
dc.citation.volume61-
dc.citation.number1-
dc.citation.startPage15-
dc.citation.endPage33-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.description.journalRegisteredClasskci-
dc.identifier.wosid001265067500001-
dc.identifier.scopusid2-s2.0-85178941625-
dc.relation.journalWebOfScienceCategoryMaterials Science, Ceramics-
dc.relation.journalResearchAreaMaterials Science-
dc.type.docTypeReview; Early Access-
dc.subject.keywordPlusFILMS-
dc.subject.keywordPlusHETEROJUNCTION-
dc.subject.keywordPlusEFFICIENCY-
dc.subject.keywordPlusION MIGRATION-
dc.subject.keywordPlusSOLAR-CELLS-
dc.subject.keywordPlusHALIDE PEROVSKITE-
dc.subject.keywordPlusQUANTUM DOTS-
dc.subject.keywordPlusNANOCRYSTALS-
dc.subject.keywordPlusBROMIDE-
dc.subject.keywordPlusSTABILITY-
dc.subject.keywordAuthorPassivation-
dc.subject.keywordAuthorDefects-
dc.subject.keywordAuthorGrain boundaries-
dc.subject.keywordAuthorVacancies-
dc.subject.keywordAuthorIon migration-
dc.subject.keywordAuthorPerovskite-
dc.subject.keywordAuthorPhotosensor-
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KIST Article > 2023
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