Full metadata record
DC Field | Value | Language |
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dc.contributor.author | Al-Mamun, Nahid Sultan | - |
dc.contributor.author | Rasel, Md Abu Jafar | - |
dc.contributor.author | Wolfe, Douglas E. | - |
dc.contributor.author | Haque, Aman | - |
dc.contributor.author | Schoell, Ryan | - |
dc.contributor.author | Hattar, Khalid | - |
dc.contributor.author | Ryu, Seung Ho | - |
dc.contributor.author | Kim, Seong Keun | - |
dc.date.accessioned | 2024-01-19T08:32:11Z | - |
dc.date.available | 2024-01-19T08:32:11Z | - |
dc.date.created | 2023-09-21 | - |
dc.date.issued | 2023-10 | - |
dc.identifier.issn | 1862-6300 | - |
dc.identifier.uri | https://pubs.kist.re.kr/handle/201004/113213 | - |
dc.description.abstract | The study investigates the mitigation of radiation damage on p-type SnO thin-film transistors (TFTs) with a fast, room-temperature annealing process. Atomic layer deposition is utilized to fabricate bottom-gate TFTs of high-quality p-type SnO layers. After 2.8 MeV Au4+ irradiation at a fluence level of 5.2 x 1012 ions cm-2, the output drain current and on/off current ratio (Ion/Ioff) decrease by more than one order of magnitude, field-effect mobility (& mu;FE) reduces more than four times, and subthreshold swing (SS) increases more than four times along with a negative shift in threshold voltage. The observed degradation is attributed to increased surface roughness and defect density, as confirmed by scanning electron microscopy (SEM), high-resolution micro-Raman, and transmission electron microscopy (TEM) with geometric phase analysis (GPA). A technique is demonstrated to recover the device performance at room temperature and in less than a minute, using the electron wind force (EWF) obtained from low-duty-cycle high-density pulsed current. At a pulsed current density of 4.0 x 105 A cm-2, approximately four times increase in Ion/Ioff is observed, 41% increase in & mu;FE, and 20% decrease in the SS of the irradiated TFTs, suggesting effectiveness of the new annealing technique. A room-temperature annealing process is demonstrated on p-type SnO thin-film transistors, intentionally degraded with heavy ion irradiation. The proposed electron wind force technique takes less than a minute to recover on-off ratio by 4 times, field-effect mobility by 40%, and subthreshold swing by 20%.image & COPY; 2023 WILEY-VCH GmbH | - |
dc.language | English | - |
dc.publisher | Wiley - V C H Verlag GmbbH & Co. | - |
dc.title | Mitigating Heavy Ion Irradiation-Induced Degradation in p-type SnO Thin-Film Transistors at Room Temperature | - |
dc.type | Article | - |
dc.identifier.doi | 10.1002/pssa.202300392 | - |
dc.description.journalClass | 1 | - |
dc.identifier.bibliographicCitation | physica status solidi (a) - applications and materials science, v.220, no.19 | - |
dc.citation.title | physica status solidi (a) - applications and materials science | - |
dc.citation.volume | 220 | - |
dc.citation.number | 19 | - |
dc.description.isOpenAccess | Y | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.identifier.wosid | 001059823600001 | - |
dc.identifier.scopusid | 2-s2.0-85170097101 | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.type.docType | Article | - |
dc.subject.keywordPlus | WIND FORCE | - |
dc.subject.keywordPlus | DESIGN PRINCIPLES | - |
dc.subject.keywordPlus | HOLE MOBILITY | - |
dc.subject.keywordPlus | RAMAN | - |
dc.subject.keywordPlus | MICROSTRUCTURE | - |
dc.subject.keywordPlus | IDENTIFICATION | - |
dc.subject.keywordPlus | FABRICATION | - |
dc.subject.keywordPlus | DEVICES | - |
dc.subject.keywordPlus | SURFACE | - |
dc.subject.keywordAuthor | defect mitigation | - |
dc.subject.keywordAuthor | electro-pulsing | - |
dc.subject.keywordAuthor | heavy ion irradiation | - |
dc.subject.keywordAuthor | p-type thin film transistor | - |
dc.subject.keywordAuthor | SnO | - |
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