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dc.contributor.authorAl-Mamun, Nahid Sultan-
dc.contributor.authorRasel, Md Abu Jafar-
dc.contributor.authorWolfe, Douglas E.-
dc.contributor.authorHaque, Aman-
dc.contributor.authorSchoell, Ryan-
dc.contributor.authorHattar, Khalid-
dc.contributor.authorRyu, Seung Ho-
dc.contributor.authorKim, Seong Keun-
dc.date.accessioned2024-01-19T08:32:11Z-
dc.date.available2024-01-19T08:32:11Z-
dc.date.created2023-09-21-
dc.date.issued2023-10-
dc.identifier.issn1862-6300-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/113213-
dc.description.abstractThe study investigates the mitigation of radiation damage on p-type SnO thin-film transistors (TFTs) with a fast, room-temperature annealing process. Atomic layer deposition is utilized to fabricate bottom-gate TFTs of high-quality p-type SnO layers. After 2.8 MeV Au4+ irradiation at a fluence level of 5.2 x 1012 ions cm-2, the output drain current and on/off current ratio (Ion/Ioff) decrease by more than one order of magnitude, field-effect mobility (& mu;FE) reduces more than four times, and subthreshold swing (SS) increases more than four times along with a negative shift in threshold voltage. The observed degradation is attributed to increased surface roughness and defect density, as confirmed by scanning electron microscopy (SEM), high-resolution micro-Raman, and transmission electron microscopy (TEM) with geometric phase analysis (GPA). A technique is demonstrated to recover the device performance at room temperature and in less than a minute, using the electron wind force (EWF) obtained from low-duty-cycle high-density pulsed current. At a pulsed current density of 4.0 x 105 A cm-2, approximately four times increase in Ion/Ioff is observed, 41% increase in & mu;FE, and 20% decrease in the SS of the irradiated TFTs, suggesting effectiveness of the new annealing technique. A room-temperature annealing process is demonstrated on p-type SnO thin-film transistors, intentionally degraded with heavy ion irradiation. The proposed electron wind force technique takes less than a minute to recover on-off ratio by 4 times, field-effect mobility by 40%, and subthreshold swing by 20%.image & COPY; 2023 WILEY-VCH GmbH-
dc.languageEnglish-
dc.publisherWiley - V C H Verlag GmbbH & Co.-
dc.titleMitigating Heavy Ion Irradiation-Induced Degradation in p-type SnO Thin-Film Transistors at Room Temperature-
dc.typeArticle-
dc.identifier.doi10.1002/pssa.202300392-
dc.description.journalClass1-
dc.identifier.bibliographicCitationphysica status solidi (a) - applications and materials science, v.220, no.19-
dc.citation.titlephysica status solidi (a) - applications and materials science-
dc.citation.volume220-
dc.citation.number19-
dc.description.isOpenAccessY-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.identifier.wosid001059823600001-
dc.identifier.scopusid2-s2.0-85170097101-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.relation.journalWebOfScienceCategoryPhysics, Condensed Matter-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalResearchAreaPhysics-
dc.type.docTypeArticle-
dc.subject.keywordPlusWIND FORCE-
dc.subject.keywordPlusDESIGN PRINCIPLES-
dc.subject.keywordPlusHOLE MOBILITY-
dc.subject.keywordPlusRAMAN-
dc.subject.keywordPlusMICROSTRUCTURE-
dc.subject.keywordPlusIDENTIFICATION-
dc.subject.keywordPlusFABRICATION-
dc.subject.keywordPlusDEVICES-
dc.subject.keywordPlusSURFACE-
dc.subject.keywordAuthordefect mitigation-
dc.subject.keywordAuthorelectro-pulsing-
dc.subject.keywordAuthorheavy ion irradiation-
dc.subject.keywordAuthorp-type thin film transistor-
dc.subject.keywordAuthorSnO-
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