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dc.contributor.authorKim, Gwang-Bok-
dc.contributor.authorKim, Taikyu-
dc.contributor.authorChoi, Cheol Hee-
dc.contributor.authorChung, Sang Won-
dc.contributor.authorJeong, Jae Kyeong-
dc.date.accessioned2024-01-19T09:03:50Z-
dc.date.available2024-01-19T09:03:50Z-
dc.date.created2023-08-24-
dc.date.issued2023-07-
dc.identifier.issn0741-3106-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/113489-
dc.description.abstractThis study shows the effect of single spinel phase crystallization on drain-induced barrier lowering (DIBL) of indium-zinc-tin-oxide (IZTO) thin-film transistors (TFTs) with submicron channel length. The 0.9-mu m-long amorphous IZTO (a-IZTO) TFT shows a poor DIBL of 318 mV/V. In contrast, a significant improvement in the DIBL is achieved in the single spinel phase IZTO (s-IZTO) TFT, which could be attributed to the suppression of lateral diffusion of oxygen vacancy (VO) and low VO defects through crystallization-induced enforcement of metal-oxygen bonds. Consequently, 0.9-mu m-long s-IZTO TFT reveals a small DIBL of 92 mV/V as well as a high field-effect mobility of 90.1 cm(2)/Vs and a low subthreshold swing of 0.1 V/dec. In addition, reliability against external bias temperature stress is considerably improved through single-phase crystallization, leading to an insignificant threshold voltage shift of +0.4 (-0.4) V under positive (negative) bias stress with electric field of 2 (-2) MV/cm at 60 degrees C for 10,000 s, respectively, in the 0.9-mu m-long s-IZTO TFT.-
dc.languageEnglish-
dc.publisherInstitute of Electrical and Electronics Engineers-
dc.titleEffect of Single Spinel Phase Crystallization on Drain-Induced-Barrier-Lowering in Submicron Length IZTO Thin-Film Transistors-
dc.typeArticle-
dc.identifier.doi10.1109/LED.2023.3274670-
dc.description.journalClass1-
dc.identifier.bibliographicCitationIEEE Electron Device Letters, v.44, no.7, pp.1132 - 1135-
dc.citation.titleIEEE Electron Device Letters-
dc.citation.volume44-
dc.citation.number7-
dc.citation.startPage1132-
dc.citation.endPage1135-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.identifier.wosid001021302800026-
dc.identifier.scopusid2-s2.0-85159843232-
dc.relation.journalWebOfScienceCategoryEngineering, Electrical & Electronic-
dc.relation.journalResearchAreaEngineering-
dc.type.docTypeArticle-
dc.subject.keywordPlusCHANNEL-
dc.subject.keywordAuthorOxide semiconductor-
dc.subject.keywordAuthorcrystallization-
dc.subject.keywordAuthordrain induced barrier lowering-
dc.subject.keywordAuthorthin-film transistor-
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