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dc.contributor.authorChoi, Kwang-Hun-
dc.contributor.authorKim, Soo Jin-
dc.contributor.authorKim, Hyoungjun-
dc.contributor.authorJang, Ho Won-
dc.contributor.authorYi, Hyunjung-
dc.contributor.authorPark, Min-Chul-
dc.contributor.authorChoi, Changsoon-
dc.contributor.authorJu, Hyunsu-
dc.contributor.authorLim, Jung Ah-
dc.date.accessioned2024-01-19T10:01:54Z-
dc.date.available2024-01-19T10:01:54Z-
dc.date.created2023-03-30-
dc.date.issued2023-03-
dc.identifier.issn1936-0851-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/113940-
dc.description.abstractIn this study, a fibriform electrochemical diode capable of performing rectifying, complementary logic and device protection functions for future e-textile circuit systems is fabricated. The diode was fabricated using a simple twisted assembly of metal/polymer semiconductor/ion gel coaxial microfibers and conducting microfiber electrodes. The fibriform diode exhibited a prominent asymmetrical current flow with a rectification ratio of over 102, and its performance was retained after repeated bending deformations and washings. Fundamen-tal studies on the electrochemical interactions of polymer semiconductors with ions reveal that the Faradaic current generated in polymer semiconductors by electrochemical reactions results in an abrupt current increase under a forward bias, in which the threshold voltages of the device are determined by the oxidation or reduction potential of the polymer semiconductor. Textile-embedded full-wave rectifiers and logic gate circuits were implemented by simply integrating the fibriform diodes, exhibiting AC-to-DC signal conversion and logic operation functions, respectively. It was also confirmed that the proposed fibriform diode can suppress transient voltages and thus protect a low-voltage operational wearable e-textile circuit.-
dc.languageEnglish-
dc.publisherAmerican Chemical Society-
dc.titleFibriform Organic Electrochemical Diodes with Rectifying, Complementary Logic and Transient Voltage Suppression Functions for Wearable E-Textile Embedded Circuits-
dc.typeArticle-
dc.identifier.doi10.1021/acsnano.2c12418-
dc.description.journalClass1-
dc.identifier.bibliographicCitationACS Nano, v.17, no.6, pp.5821 - 5833-
dc.citation.titleACS Nano-
dc.citation.volume17-
dc.citation.number6-
dc.citation.startPage5821-
dc.citation.endPage5833-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.identifier.wosid000946545000001-
dc.identifier.scopusid2-s2.0-85149791615-
dc.relation.journalWebOfScienceCategoryChemistry, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryChemistry, Physical-
dc.relation.journalWebOfScienceCategoryNanoscience & Nanotechnology-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalResearchAreaChemistry-
dc.relation.journalResearchAreaScience & Technology - Other Topics-
dc.relation.journalResearchAreaMaterials Science-
dc.type.docTypeArticle; Early Access-
dc.subject.keywordPlusION GEL-
dc.subject.keywordPlusPOLYTHIOPHENE-
dc.subject.keywordPlusSPECTROSCOPY-
dc.subject.keywordPlusJUNCTION-
dc.subject.keywordPlusENERGY-
dc.subject.keywordPlusVAPOR-
dc.subject.keywordPlusP3HT-
dc.subject.keywordAuthororganic electrochemical diode-
dc.subject.keywordAuthorfiber-shaped electronic device-
dc.subject.keywordAuthorelectronic textile-
dc.subject.keywordAuthorelectrostatic-
dc.subject.keywordAuthorion gel-
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KIST Article > 2023
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