Growth of Broadband Gain Quantum Dot Mode Locked Laser on Si with Varied InGaAs Well Thickness

Abstract

We report broadband gain InAs quantum dot mode -locked lasers epitaxially grown on silicon by varying the thickness of InGaAs quantum wells. The peak emission wavelengths of each quantum dot layer are properly tuned in order to enhance the spectral gain bandwidth while maintaining its high optical intensity. A laser with five varied-well-thickness quantum dots has increased the photoluminescence full-width at half-maximum from 28.6 meV to 43 meV whilst keeping its high intensity. Under mode-locking, the laser shows a 3dB bandwidth of 6.1 nm with 58 comb lines.