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dc.contributor.authorSun, Yukun-
dc.contributor.authorFan, Shizhao-
dc.contributor.authorJung, Daehwan-
dc.contributor.authorLee, Minjoo Larry-
dc.contributor.authorLi, Brian-
dc.contributor.authorVaisman, Michelle-
dc.contributor.authorHool, Ryan-
dc.date.accessioned2024-01-19T10:08:17Z-
dc.date.available2024-01-19T10:08:17Z-
dc.date.created2022-02-28-
dc.date.issued2019-06-
dc.identifier.issn0160-8371-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/114080-
dc.description.abstractIn this work, we show that delta-doping can dramatically improve the performance of tunnel junctions. As an example, one of our delta-doped tunnel junctions achieved a peak current of 3.59 kA/cm(2) , while its structurally identical counterpart without delta-doping reached a peak current of just 7.32 mA/cm(2) . Several different tunnel junction designs were explored with differing amounts of optical absorption, and all showed significant improvement from delta-doping. With the benefit of delta doping, all tunnel junctions investigated here are able to survive top cell growth conditions and additional rapid thermal annealing.-
dc.languageEnglish-
dc.publisherIEEE-
dc.titleDelta-doping for enhanced tunnel junction performance and thermal stability-
dc.typeConference-
dc.description.journalClass1-
dc.identifier.bibliographicCitationIEEE 46th Photovoltaic Specialists Conference (PVSC), pp.3211 - 3214-
dc.citation.titleIEEE 46th Photovoltaic Specialists Conference (PVSC)-
dc.citation.startPage3211-
dc.citation.endPage3214-
dc.citation.conferencePlaceUS-
dc.citation.conferencePlaceChicago, IL-
dc.citation.conferenceDate2019-06-16-
dc.relation.isPartOf2019 IEEE 46TH PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC)-
dc.identifier.wosid000542034903017-
dc.identifier.scopusid2-s2.0-85081589807-
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KIST Conference Paper > 2019
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