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dc.contributor.authorLi, Qiang-
dc.contributor.authorHan, Jae-Hoon-
dc.contributor.authorTakenaka, Mitsuru-
dc.contributor.authorTakagi, Shinichi-
dc.contributor.authorLee, Tsung-En-
dc.date.accessioned2024-01-19T10:08:56Z-
dc.date.available2024-01-19T10:08:56Z-
dc.date.created2022-02-28-
dc.date.issued2019-05-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/114099-
dc.languageEnglish-
dc.publisherIEEE-
dc.titleEquivalent oxide thickness scaling for efficient III-V/Si hybrid MOS optical phase shifter-
dc.typeConference-
dc.description.journalClass1-
dc.identifier.bibliographicCitationCompound Semiconductor Week (CSW) Conference-
dc.citation.titleCompound Semiconductor Week (CSW) Conference-
dc.citation.conferencePlaceUS-
dc.citation.conferencePlaceNara, JAPAN-
dc.citation.conferenceDate2019-05-19-
dc.relation.isPartOf2019 COMPOUND SEMICONDUCTOR WEEK (CSW)-
dc.identifier.wosid000539485600205-
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KIST Conference Paper > 2019
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