DSpace at KISTKIST Conference Paper2017

Full metadata record

DC Field Value Language
dc.contributor.authorKim, SangHyeon-
dc.contributor.authorGeum, Dae-Myeong-
dc.contributor.authorKim, Seong Kwang-
dc.contributor.authorKim, Hyung-Jun-
dc.contributor.authorSong, Jin Dong-
dc.contributor.authorChoi, Won Jun-
dc.date.accessioned2024-01-19T11:08:43Z-
dc.date.available2024-01-19T11:08:43Z-
dc.date.created2022-03-01-
dc.date.issued2017-01-05-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/114659-
dc.languageEnglish-
dc.publisherIEEE-
dc.titleHigh-speed epitaxial lift-off for III-V-on-insulator transistors on Si substrates-
dc.typeConference-
dc.description.journalClass1-
dc.identifier.bibliographicCitationIEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)-
dc.citation.titleIEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)-
dc.citation.conferencePlaceUS-
dc.citation.conferencePlaceBurlingame, CA-
dc.citation.conferenceDate2016-10-10-
dc.relation.isPartOf2016 IEEE SOI-3D-SUBTHRESHOLD MICROELECTRONICS TECHNOLOGY UNIFIED CONFERENCE (S3S)-
dc.identifier.wosid000392693000009-
dc.identifier.scopusid2-s2.0-85011283172-
Appears in Collections:
KIST Conference Paper > 2017
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML
Show Simple Item Record

qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE