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dc.contributor.authorHong, Seongin-
dc.contributor.authorKim, Seung Min-
dc.contributor.authorSong, Won Geun-
dc.contributor.authorHong, Youngki-
dc.contributor.authorKim, Sunkook-
dc.date.accessioned2024-01-19T11:09:49Z-
dc.date.available2024-01-19T11:09:49Z-
dc.date.created2022-03-01-
dc.date.issued2016-09-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/114712-
dc.languageEnglish-
dc.publisherIEEE-
dc.titleHigh-mobility 2D layered semiconducting transistors based on large-area and highly crystalline CVD-grown MoSe2 for flexible electronics-
dc.typeConference-
dc.description.journalClass1-
dc.identifier.bibliographicCitationIEEE Silicon Nanoelectronics Workshop (SNW), pp.56 - 57-
dc.citation.titleIEEE Silicon Nanoelectronics Workshop (SNW)-
dc.citation.startPage56-
dc.citation.endPage57-
dc.citation.conferencePlaceUS-
dc.citation.conferencePlaceHonolulu, HI-
dc.citation.conferenceDate2016-06-12-
dc.relation.isPartOf2016 IEEE SILICON NANOELECTRONICS WORKSHOP (SNW)-
dc.identifier.wosid000391250500024-
dc.identifier.scopusid2-s2.0-84994796814-
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KIST Conference Paper > 2016
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