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dc.contributor.authorHwang, Jinwoong-
dc.contributor.authorJin, Yeongrok-
dc.contributor.authorZhang, Canxun-
dc.contributor.authorZhu, Tiancong-
dc.contributor.authorKim, Kyoo-
dc.contributor.authorZhong, Yong-
dc.contributor.authorLee, Ji-Eun-
dc.contributor.authorShen, Zongqi-
dc.contributor.authorChen, Yi-
dc.contributor.authorRuan, Wei-
dc.contributor.authorRyu, Hyejin-
dc.contributor.authorHwang, Choongyu-
dc.contributor.authorLee, Jaekwang-
dc.contributor.authorCrommie, Michael F.-
dc.contributor.authorMo, Sung-Kwan-
dc.contributor.authorShen, Zhi-Xun-
dc.date.accessioned2024-01-19T11:30:07Z-
dc.date.available2024-01-19T11:30:07Z-
dc.date.created2022-09-02-
dc.date.issued2022-09-
dc.identifier.issn0935-9648-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/114723-
dc.description.abstractThe spontaneous formation of electronic orders is a crucial element for understanding complex quantum states and engineering heterostructures in 2D materials. A novel 19$\sqrt {19} $ x19$\sqrt {19} $ charge order in few-layer-thick 1T-TaTe2 transition metal dichalcogenide films grown by molecular beam epitaxy, which has not been realized, is report. The photoemission and scanning probe measurements demonstrate that monolayer 1T-TaTe2 exhibits a variety of metastable charge density wave orders, including the 19$\sqrt {19} $ x 19$\sqrt {19} $ superstructure, which can be selectively stabilized by controlling the post-growth annealing temperature. Moreover, it is found that only the 19$\sqrt {19} $ x 19$\sqrt {19} $ order persists in 1T-TaTe2 films thicker than a monolayer, up to 8 layers. The findings identify the previously unrealized novel electronic order in a much-studied transition metal dichalcogenide and provide a viable route to control it within the epitaxial growth process.-
dc.languageEnglish-
dc.publisherWILEY-VCH Verlag GmbH & Co. KGaA, Weinheim-
dc.titleA Novel 19× 19 Superstructure in Epitaxially Grown 1T-TaTe2-
dc.typeArticle-
dc.identifier.doi10.1002/adma.202204579-
dc.description.journalClass1-
dc.identifier.bibliographicCitationAdvanced Materials, v.34, no.38-
dc.citation.titleAdvanced Materials-
dc.citation.volume34-
dc.citation.number38-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.identifier.wosid000842320500001-
dc.relation.journalWebOfScienceCategoryChemistry, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryChemistry, Physical-
dc.relation.journalWebOfScienceCategoryNanoscience & Nanotechnology-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.relation.journalWebOfScienceCategoryPhysics, Condensed Matter-
dc.relation.journalResearchAreaChemistry-
dc.relation.journalResearchAreaScience & Technology - Other Topics-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalResearchAreaPhysics-
dc.type.docTypeArticle-
dc.subject.keywordPlusCHARGE-DENSITY-WAVE-
dc.subject.keywordAuthortransition metal dichalcogenides-
dc.subject.keywordAuthorangle-resolved photoemission-
dc.subject.keywordAuthorcharge density waves-
dc.subject.keywordAuthormolecular beam epitaxy-
dc.subject.keywordAuthortantalum ditellurides-
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