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dc.contributor.authorOh, Sangyoon-
dc.contributor.authorPark, Sang Kyu-
dc.contributor.authorPark, Soo Young-
dc.date.accessioned2024-01-19T12:03:33Z-
dc.date.available2024-01-19T12:03:33Z-
dc.date.created2022-04-03-
dc.date.issued2022-05-
dc.identifier.issn2199-160X-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/115263-
dc.description.abstractIn spite of the large potential of ambipolar transistors constituted of laterally aligned unipolar n-/p-channel semiconductors, it is hard to secure the full electrical performance of each semiconductor channel by the risk of intermixing which leads to low crystallinity. Here, a novel fabrication process of patterned taping is proposed which ensures the formation of sharp interface and thus preserving the original performance of individual channels-laterally aligned micro n-/p-channels via all-dry soft-lithographic process. Different from other bi-component active layer devices, such as vertically stacked n-/p-bilayer and n-/p-blend film, laterally aligned n-/p-channel of this work secures clear ambipolarity because both the n-/p-channels are directly laid over a common gate dielectric surface. Essentially, laterally aligned n-/p-channels constructed by patterned taping are free from lateral channel mixing or broadening effect different from other processes such as wet-processing and fine metal mask (FMM) patterning. In this work, a novel patterned taping method of laterally aligned n-/p-channel transistors and also their optimized transistor performances compared with other bi-component devices using the same set of n- and p-type semiconductor materials is demonstrated.-
dc.languageEnglish-
dc.publisherWILEY-
dc.titleProcedure Optimization for Organic Ambipolar Transistor: Laterally Aligned Micro n-/p-Channels via Dry Soft-Lithographic Process-
dc.typeArticle-
dc.identifier.doi10.1002/aelm.202101041-
dc.description.journalClass1-
dc.identifier.bibliographicCitationADVANCED ELECTRONIC MATERIALS, v.8, no.5-
dc.citation.titleADVANCED ELECTRONIC MATERIALS-
dc.citation.volume8-
dc.citation.number5-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.identifier.wosid000734949700001-
dc.identifier.scopusid2-s2.0-85122009712-
dc.relation.journalWebOfScienceCategoryNanoscience & Nanotechnology-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.relation.journalResearchAreaScience & Technology - Other Topics-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalResearchAreaPhysics-
dc.type.docTypeArticle-
dc.subject.keywordPlusCHARGE-TRANSPORT-
dc.subject.keywordPlusPOLYMER-
dc.subject.keywordPlusELECTRON-
dc.subject.keywordAuthorambipolar transistor-
dc.subject.keywordAuthorbalanced ambipolar device-
dc.subject.keywordAuthorbi-component active layer-
dc.subject.keywordAuthorlaterally stacked n--
dc.subject.keywordAuthorp-channels-
dc.subject.keywordAuthororganic compatible patterning-
dc.subject.keywordAuthorsharp channel interface-
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KIST Article > 2022
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