Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Oh, Sangyoon | - |
dc.contributor.author | Park, Sang Kyu | - |
dc.contributor.author | Park, Soo Young | - |
dc.date.accessioned | 2024-01-19T12:03:33Z | - |
dc.date.available | 2024-01-19T12:03:33Z | - |
dc.date.created | 2022-04-03 | - |
dc.date.issued | 2022-05 | - |
dc.identifier.issn | 2199-160X | - |
dc.identifier.uri | https://pubs.kist.re.kr/handle/201004/115263 | - |
dc.description.abstract | In spite of the large potential of ambipolar transistors constituted of laterally aligned unipolar n-/p-channel semiconductors, it is hard to secure the full electrical performance of each semiconductor channel by the risk of intermixing which leads to low crystallinity. Here, a novel fabrication process of patterned taping is proposed which ensures the formation of sharp interface and thus preserving the original performance of individual channels-laterally aligned micro n-/p-channels via all-dry soft-lithographic process. Different from other bi-component active layer devices, such as vertically stacked n-/p-bilayer and n-/p-blend film, laterally aligned n-/p-channel of this work secures clear ambipolarity because both the n-/p-channels are directly laid over a common gate dielectric surface. Essentially, laterally aligned n-/p-channels constructed by patterned taping are free from lateral channel mixing or broadening effect different from other processes such as wet-processing and fine metal mask (FMM) patterning. In this work, a novel patterned taping method of laterally aligned n-/p-channel transistors and also their optimized transistor performances compared with other bi-component devices using the same set of n- and p-type semiconductor materials is demonstrated. | - |
dc.language | English | - |
dc.publisher | WILEY | - |
dc.title | Procedure Optimization for Organic Ambipolar Transistor: Laterally Aligned Micro n-/p-Channels via Dry Soft-Lithographic Process | - |
dc.type | Article | - |
dc.identifier.doi | 10.1002/aelm.202101041 | - |
dc.description.journalClass | 1 | - |
dc.identifier.bibliographicCitation | ADVANCED ELECTRONIC MATERIALS, v.8, no.5 | - |
dc.citation.title | ADVANCED ELECTRONIC MATERIALS | - |
dc.citation.volume | 8 | - |
dc.citation.number | 5 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.identifier.wosid | 000734949700001 | - |
dc.identifier.scopusid | 2-s2.0-85122009712 | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.type.docType | Article | - |
dc.subject.keywordPlus | CHARGE-TRANSPORT | - |
dc.subject.keywordPlus | POLYMER | - |
dc.subject.keywordPlus | ELECTRON | - |
dc.subject.keywordAuthor | ambipolar transistor | - |
dc.subject.keywordAuthor | balanced ambipolar device | - |
dc.subject.keywordAuthor | bi-component active layer | - |
dc.subject.keywordAuthor | laterally stacked n- | - |
dc.subject.keywordAuthor | p-channels | - |
dc.subject.keywordAuthor | organic compatible patterning | - |
dc.subject.keywordAuthor | sharp channel interface | - |
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