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dc.contributor.authorPark, Byungchoul-
dc.contributor.authorPark, Injun-
dc.contributor.authorPark, Chanmin-
dc.contributor.authorChoi, Woojun-
dc.contributor.authorNa, Yoondeok-
dc.contributor.authorLee, Myung-Jae-
dc.contributor.authorChae, Youngcheol-
dc.date.accessioned2024-01-19T13:33:48Z-
dc.date.available2024-01-19T13:33:48Z-
dc.date.created2022-01-10-
dc.date.issued2021-10-
dc.identifier.issn0018-9200-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/116325-
dc.description.abstractThis article presents a 64 x 64 indirect time-of-flight (iToF) image sensor with a depth range of 50 m, integrated into a 1P4M 110-nm CMOS process. The sensor is based on a single-photon avalanche diode (SPAD), the range-dependent phase delay of which is measured by compact analog time-gated pulse counters and then read out by column-parallel single-slope (SS) analog-to-digital converters (ADCs). We present two prototypes of iToF sensors that exploit one- or two-tap counters in the pixel. Compared to the one-tap sensor, the two-tap sensor achieves an improved fill factor of 26.3% with a pixel pitch of 32 mu m. This improvement is realized by using a retrograde deep n-well as guard-ring structure and two analog counters whose layout has been optimized. By utilizing two different demodulation frequencies of 1.56 and 50 MHz, the two-tap sensor achieves a large depth range of 50 m with a relative depth uncertainty of 0.22% and a high 3-D frame rate of 65 frames/s. When using an optical bandpass filter and multi-frame accumulation, the sensor shows a tolerance of 120-klx sunlight. Compared with the previous iToF benchmarks, the proposed SPAD-based iToF sensor demonstrates the largest depth range without compromising the relative depth uncertainty.-
dc.languageEnglish-
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC-
dc.titleA 64 x 64 SPAD-Based Indirect Time-of-Flight Image Sensor With 2-Tap Analog Pulse Counters-
dc.typeArticle-
dc.identifier.doi10.1109/JSSC.2021.3094524-
dc.description.journalClass1-
dc.identifier.bibliographicCitationIEEE JOURNAL OF SOLID-STATE CIRCUITS, v.56, no.10, pp.2956 - 2967-
dc.citation.titleIEEE JOURNAL OF SOLID-STATE CIRCUITS-
dc.citation.volume56-
dc.citation.number10-
dc.citation.startPage2956-
dc.citation.endPage2967-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.identifier.wosid000698895200012-
dc.identifier.scopusid2-s2.0-85110913165-
dc.relation.journalWebOfScienceCategoryEngineering, Electrical & Electronic-
dc.relation.journalResearchAreaEngineering-
dc.type.docTypeArticle-
dc.subject.keywordAuthor3-D imaging-
dc.subject.keywordAuthoranalog counter-
dc.subject.keywordAuthorCMOS timeof-flight (ToF) sensor-
dc.subject.keywordAuthorglobal shutter-
dc.subject.keywordAuthorindirect ToF (iToF) sensor-
dc.subject.keywordAuthorsingle-photon avalanche diode (SPAD)-
dc.subject.keywordAuthorSPAD-based iToF sensor-
dc.subject.keywordAuthortime-gated pulse counter-
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