Full metadata record

DC Field Value Language
dc.contributor.authorGwon, Oh Hun-
dc.contributor.authorKim, Jong Yun-
dc.contributor.authorKim, Han Seul-
dc.contributor.authorKang, Seok-Ju-
dc.contributor.authorByun, Hye Ryung-
dc.contributor.authorPark, Min-
dc.contributor.authorLee, Dong Su-
dc.contributor.authorKim, Yoon-jeong-
dc.contributor.authorAhn, Seokhoon-
dc.contributor.authorKim, Jaekyung-
dc.contributor.authorCho, Sang-Joon-
dc.contributor.authorYu, Young-Jun-
dc.date.accessioned2024-01-19T13:34:24Z-
dc.date.available2024-01-19T13:34:24Z-
dc.date.created2021-10-21-
dc.date.issued2021-10-
dc.identifier.issn1616-301X-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/116365-
dc.description.abstractVan der Waals (vdW) heterostructures with 2D materials have shown that atomically thin non-volatile memories are advantageous in terms of integration, while offering high performance and excellent stability. The non-volatile memory behavior of 2D materials has mainly been studied for single-bit operation, and there is growing interest in expanding to multi-bit operation to enhance the storage capacities of memory devices. However, the conditions or rules for generating the desired number of bits in 2D-based multi-bit memory remain to be identified. In this study, multiple bits are successfully created on non-volatile memory based on vdW heterostructure floating-gate memory (FGM) by systematically tuning the dimensions of the 2D materials. In particular, a fingerprint mechanism is established that links the bit number and dimensions of 2D crystals on vdW heterostructures. This approach could enable the precise generation of the desired number of bits in layered-material-based vdW FGMs.-
dc.languageEnglish-
dc.publisherWILEY-V C H VERLAG GMBH-
dc.subjectDER-WAALS HETEROSTRUCTURES-
dc.subjectNONVOLATILE MEMORY-
dc.subjectFLASH-
dc.subjectTRANSISTORS-
dc.subjectMOBILITY-
dc.subjectBUBBLES-
dc.titleSystematic Design and Demonstration of Multi-Bit Generation in Layered Materials Heterostructures Floating-Gate Memory-
dc.typeArticle-
dc.identifier.doi10.1002/adfm.202105472-
dc.description.journalClass1-
dc.identifier.bibliographicCitationADVANCED FUNCTIONAL MATERIALS, v.31, no.43-
dc.citation.titleADVANCED FUNCTIONAL MATERIALS-
dc.citation.volume31-
dc.citation.number43-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.identifier.wosid000674195400001-
dc.identifier.scopusid2-s2.0-85110508861-
dc.relation.journalWebOfScienceCategoryChemistry, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryChemistry, Physical-
dc.relation.journalWebOfScienceCategoryNanoscience & Nanotechnology-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.relation.journalWebOfScienceCategoryPhysics, Condensed Matter-
dc.relation.journalResearchAreaChemistry-
dc.relation.journalResearchAreaScience & Technology - Other Topics-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalResearchAreaPhysics-
dc.type.docTypeArticle-
dc.subject.keywordPlusDER-WAALS HETEROSTRUCTURES-
dc.subject.keywordPlusNONVOLATILE MEMORY-
dc.subject.keywordPlusFLASH-
dc.subject.keywordPlusTRANSISTORS-
dc.subject.keywordPlusMOBILITY-
dc.subject.keywordPlusBUBBLES-
dc.subject.keywordAuthor2D materials-
dc.subject.keywordAuthorfloating gate memory-
dc.subject.keywordAuthorhBN thickness-
dc.subject.keywordAuthormulti-bit generation map-
dc.subject.keywordAuthormulti-bit memory-
Appears in Collections:
KIST Article > 2021
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML

qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE