Cmme-SnS: a two-dimensional tin sulfide nanosheet

Authors
Ram, BabuMizuseki, Hiroshi
Issue Date
2020-10-28
Publisher
ROYAL SOC CHEMISTRY
Citation
JOURNAL OF MATERIALS CHEMISTRY A, v.8, no.40, pp.21219 - 21226
Abstract
The great success of graphene has triggered an enormous amount of interest in the search for new 2D materials. These materials open up excellent opportunities for nanoelectronics, optoelectronics and photocatalysis. Here, we designed a new 2D sheet of tin sulfide with space group Cmme (67), known as Cmme-SnS using first-principles calculations. Cmme-SnS is a semiconductor with an indirect electronic band gap of 2.13 eV between Gamma and M-X directions. It exhibits energetic, dynamical, mechanical, and thermal stability. This material shows direction-dependent transport properties where mobilities are mainly hole-dominated. We also observed significant improvement in the optical absorption in the visible region compared to monolayer SnS2. Interestingly, the well-located band edge positions and the appropriate band gap make this 2D material suitable for visible-light-driven photocatalytic water splitting.
Keywords
CHEMICAL-VAPOR-DEPOSITION; TOTAL-ENERGY CALCULATIONS; HYDROGEN EVOLUTION; CARRIER MOBILITY; EXFOLIATION; PERFORMANCE; WATER; MOS2; PHOTOCATALYST; GROWTH; CHEMICAL-VAPOR-DEPOSITION; TOTAL-ENERGY CALCULATIONS; HYDROGEN EVOLUTION; CARRIER MOBILITY; EXFOLIATION; PERFORMANCE; WATER; MOS2; PHOTOCATALYST; GROWTH; 2D materials; SnS
ISSN
2050-7488
URI
https://pubs.kist.re.kr/handle/201004/117977
DOI
10.1039/d0ta05598k
Appears in Collections:
KIST Article > 2020
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML

qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE