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dc.contributor.authorChalapathi, U.-
dc.contributor.authorPoornaprakash, B.-
dc.contributor.authorChoi, Won Jun-
dc.contributor.authorPark, Si-Hyun-
dc.date.accessioned2024-01-19T17:03:32Z-
dc.date.available2024-01-19T17:03:32Z-
dc.date.created2021-09-05-
dc.date.issued2020-07-04-
dc.identifier.issn0947-8396-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/118402-
dc.description.abstractSnS is a promising material for use in thin-film solar cells because of its suitable optoelectronic properties. So far, SnS thin films with a cubic crystal structure, prepared by chemical bath deposition, with long deposition times and low film thicknesses have been reported. Herein, we report the rapid fabrication of cubic SnS films by increasing the concentration of ammonia(aq) in the solution. SnS films deposited with low ammonia(aq) (0.1875 M) took 6 h to form 400 nm film, and the films were mixedphase. Increasing the concentration from 0.375 to 0.5625 M increased the film thickness from 600 to 1000 nm, with a deposition time of 6 h, and the formation of single-phase SnS. Further increase in the concentration from 0.75 to 0.9375 M decreased the deposition time to 4 h and increased the film thickness (1100-1300 nm). Again, increasing the concentration further to 1.125 M decreased the deposition time to 2 h and film thickness to 900 nm. Thus, increasing the concentration of ammonia(aq) increases the thickness of cubic SnS formed and decreases the deposition time. This work proposes a very useful technique for producing good-quality cubic SnS thin films in a short deposition time of 2-4 h.-
dc.languageEnglish-
dc.publisherSPRINGER HEIDELBERG-
dc.subjectATOMIC LAYER DEPOSITION-
dc.subjectPHYSICAL-PROPERTIES-
dc.subjectVAPOR-DEPOSITION-
dc.subjectZINC BLENDE-
dc.subjectGEL METHOD-
dc.subjectMONOSULFIDE-
dc.subjectTEMPERATURE-
dc.subjectPOLYMORPH-
dc.subjectPHASE-
dc.titleAmmonia(aq)-enhanced growth of cubic SnS thin films by chemical bath deposition for solar cell applications-
dc.typeArticle-
dc.identifier.doi10.1007/s00339-020-03763-4-
dc.description.journalClass1-
dc.identifier.bibliographicCitationAPPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, v.126, no.8-
dc.citation.titleAPPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING-
dc.citation.volume126-
dc.citation.number8-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.identifier.wosid000548856000001-
dc.identifier.scopusid2-s2.0-85087412854-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalResearchAreaPhysics-
dc.type.docTypeArticle-
dc.subject.keywordPlusATOMIC LAYER DEPOSITION-
dc.subject.keywordPlusPHYSICAL-PROPERTIES-
dc.subject.keywordPlusVAPOR-DEPOSITION-
dc.subject.keywordPlusZINC BLENDE-
dc.subject.keywordPlusGEL METHOD-
dc.subject.keywordPlusMONOSULFIDE-
dc.subject.keywordPlusTEMPERATURE-
dc.subject.keywordPlusPOLYMORPH-
dc.subject.keywordPlusPHASE-
dc.subject.keywordAuthorSnS thin films-
dc.subject.keywordAuthorCubic structure-
dc.subject.keywordAuthorStructural properties-
dc.subject.keywordAuthorOptical properties-
dc.subject.keywordAuthorElectrical properties-
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