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dc.contributor.authorLim, SH-
dc.contributor.authorChoi, YS-
dc.contributor.authorHan, SH-
dc.contributor.authorKim, HJ-
dc.contributor.authorMoon, S-
dc.contributor.authorKang, HK-
dc.contributor.authorOh, MH-
dc.contributor.authorAhn, CH-
dc.date.accessioned2024-01-19T17:08:51Z-
dc.date.available2024-01-19T17:08:51Z-
dc.date.created2022-03-07-
dc.date.issued1999-11-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/118489-
dc.description.abstractGiant magnetostrictive thin films of amorphous Tb-Fe and Sm-Fe based alloys exhibiting excellent magnetostrictive characteristics at low magnetic fields are developed from a systematic investigation with a particular emphasis being placed to examine B effects. Magnetostrictions of 173 ppm and 585 ppm are achieved in B containing Tb-Fe and Sm-Fe thin films, respectively, at a magnetic field of 100 Oe. Magnetostrictive thin films with these magnetostrictive levels are considered to be suitable for Si-based microdevices. The suitability is tested by fabricating and characterizing microactuators, microvalves and optical switches driven by giant magnetostrictive thin films.-
dc.languageEnglish-
dc.publisherELECTROCHEMICAL SOCIETY INC-
dc.titleMicroactuators driven by giant magnetostrictive thin films-
dc.typeConference-
dc.description.journalClass1-
dc.identifier.bibliographicCitation5th International Symposium on Magnetic Materials, Processes, and Devices at the 194th Meeting of the Electrochemical-Society, pp.327 - 341-
dc.citation.title5th International Symposium on Magnetic Materials, Processes, and Devices at the 194th Meeting of the Electrochemical-Society-
dc.citation.startPage327-
dc.citation.endPage341-
dc.citation.conferencePlaceUS-
dc.citation.conferencePlaceBOSTON, MA-
dc.citation.conferenceDate1998-11-01-
dc.relation.isPartOfPROCEEDINGS OF THE FIFTH INTERNATIONAL SYMPOSIUM ON MAGNETIC MATERIALS, PROCESSES, AND DEVICES: APPLICATIONS TO STORAGE AND MICROELECTROMECHANICAL SYSTEMS (MEMS)-
dc.identifier.wosid000080820500030-
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