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dc.contributor.authorNandy, Subhajit-
dc.contributor.authorKaur, Kulwmder-
dc.contributor.authorGautam, Sanjeev-
dc.contributor.authorChae, Keun Hwa-
dc.contributor.authorNanda, B. R. K.-
dc.contributor.authorSudakar, Chandran-
dc.date.accessioned2024-01-19T18:01:23Z-
dc.date.available2024-01-19T18:01:23Z-
dc.date.created2021-09-04-
dc.date.issued2020-03-25-
dc.identifier.issn1944-8244-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/118837-
dc.description.abstractDesigning solid-state perovskite oxide solar cells with large short circuit current (J(SC)) and open circuit voltage (V-OC) has been a challenging problem. Epitaxial BiFeO3 (BFO) films are known to exhibit large V-OC (>50 V). However, they exhibit low J(SC )(<<mu A/cm(2)) under 1 Sun illumination. In this work, taking polycrystalline BiFeO3 thin films, we demonstrate that oxygen vacancies (V-O) present within the lattice and at grain boundary (GB) can explicitly be controlled to achieve hie J(SC) and V-OC simultaneously. While aliovalent substitution (Ca2+ at Bi3+ site) is used to control the lattice V-O, Ca and Ti cosubstitution is used to bring out only GB-V-O. Fluorine-doped tin oxide (FTO)/Bi1-xCaxFe1-yTiyO3-delta/Au devices are tested for photovoltaic characteristics. Introducing V-O increases the photocurrent by four orders (J(SC) similar to 3 mA/cm(2)). On the contrary, V-OC is found to be <0.5 V, as against 0.5-3 V observed for the pristine BiFeO3. Ca and Ti cosubstitution facilitate the formation of smaller crystallites, which in turn increase the GB area and thereby the GB-V-O. This creates defect bands occupying the bulk band gap, as inferred from the diffused reflection spectra and band structure calculations, leading to a three-order increase in J(SC). The cosubstitution, following a charge compensation mechanism, decreases the lattice V-O concentration significantly to retain the ferroelectric nature with enhanced polarization. It helps to achieve V-OC (3-8 V) much larger than that of BiFeO3 (0.5-3 V). It is noteworthy that as Ca substitution maintains moderate crystallite size, the lattice V-O concentration dominates GB-V-O concentration. Notwithstanding, both lattice and GB-V-O contribute to the increase in J(SC); the former weakens ferroelectricity, and as a consequence, undesirably, V-OC is lowered well below 0.5 V. Using optimum J(SC) and V-OC, we demonstrate that the efficiency -0.22% can be achieved in solid-state BFO solar cells under AM 1.5 one Sun illumination.-
dc.languageEnglish-
dc.publisherAmerican Chemical Society-
dc.subjectFERROELECTRIC PROPERTIES-
dc.subjectDEPOLARIZATION-FIELD-
dc.subjectBIFEO3-
dc.subjectOXIDE-
dc.titleMaximizing Short Circuit Current Density and Open Circuit Voltage in Oxygen Vacancy-Controlled Bi1-xCaxFe1-yTiyO3-delta Thin-Film Solar Cells-
dc.typeArticle-
dc.identifier.doi10.1021/acsami.9b18357-
dc.description.journalClass1-
dc.identifier.bibliographicCitationACS Applied Materials & Interfaces, v.12, no.12, pp.14105 - 14118-
dc.citation.titleACS Applied Materials & Interfaces-
dc.citation.volume12-
dc.citation.number12-
dc.citation.startPage14105-
dc.citation.endPage14118-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.identifier.wosid000526552100054-
dc.identifier.scopusid2-s2.0-85082400137-
dc.relation.journalWebOfScienceCategoryNanoscience & Nanotechnology-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalResearchAreaScience & Technology - Other Topics-
dc.relation.journalResearchAreaMaterials Science-
dc.type.docTypeArticle-
dc.subject.keywordPlusFERROELECTRIC PROPERTIES-
dc.subject.keywordPlusDEPOLARIZATION-FIELD-
dc.subject.keywordPlusBIFEO3-
dc.subject.keywordPlusOXIDE-
dc.subject.keywordAuthorphotovoltaic-
dc.subject.keywordAuthoroxygen vacancies-
dc.subject.keywordAuthorferroelectric domain-
dc.subject.keywordAuthorbismuth ferrite-
dc.subject.keywordAuthorperovskite-
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