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dc.contributor.authorKang, Minji-
dc.contributor.authorCha, An-Na-
dc.contributor.authorLee, Sang-A-
dc.contributor.authorLee, Seoung-Ki-
dc.contributor.authorBae, Sukang-
dc.contributor.authorJeon, Dae-Young-
dc.contributor.authorHong, Jae-Min-
dc.contributor.authorFabiano, Simone-
dc.contributor.authorBerggren, Magnus-
dc.contributor.authorKim, Tae-Wook-
dc.date.accessioned2024-01-19T18:02:52Z-
dc.date.available2024-01-19T18:02:52Z-
dc.date.created2021-09-04-
dc.date.issued2020-03-
dc.identifier.issn1566-1199-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/118922-
dc.description.abstractOrganic phototransistor memory is considered as a promising optoelectronic device owing to its multifunctionality. However, due to the poor reliability of each function and the complexity of the device structure, it is necessary to optimize the thin-film process of functional materials when constructing multiple functions into a single device. Here, we demonstrate a dual-functional device that is both a working memory transistor and a phototransistor by incorporating photochromic spironaphthooxazine molecules into an organic insulating layer. The photochmmic molecules in the polymer matrix not only exhibit nonvolatile charge storage properties similar to nano-floating gates but also feature a reversible electronic band structure upon alternating irradiation with ultraviolet and visible light, which makes the device function as both an electrical memory transistor and a phototransistor. Furthermore, the photoresponsive charge trap layer in the demonstrated device leads to excellent memory performance under both dark and light conditions, which includes a large memory window (-56 V), stable endurance cycles (>10(2)), and good retention characteristics (>10(4) s). Our findings suggest an alternative strategy to realize organic multifunctional nonvolatile memories.-
dc.languageEnglish-
dc.publisherELSEVIER-
dc.titleLight-sensitive charge storage medium with spironaphthooxazine molecule-polymer blends for dual-functional organic phototransistor memory-
dc.typeArticle-
dc.identifier.doi10.1016/j.orgel.2019.105554-
dc.description.journalClass1-
dc.identifier.bibliographicCitationORGANIC ELECTRONICS, v.78-
dc.citation.titleORGANIC ELECTRONICS-
dc.citation.volume78-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.identifier.wosid000517963700036-
dc.identifier.scopusid2-s2.0-85075394380-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalResearchAreaPhysics-
dc.type.docTypeArticle-
dc.subject.keywordPlusFIELD-EFFECT TRANSISTORS-
dc.subject.keywordAuthorOrganic field-effect transistor-
dc.subject.keywordAuthorNonvolatile memory-
dc.subject.keywordAuthorPhotosensor-
dc.subject.keywordAuthorPhotochromic-
dc.subject.keywordAuthorMultifunctional-
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