Channel thickness-dependent mobility degradation in planar junctionless transistors

Abstract

Electrical characteristics of junctionless transistors (JLTs) with varying Si thickness (t(si)), were discussed in detail with consideration to maximum depletion width (D-max), threshold voltage (V-th) and mobility degradation caused by a transverse electric-field. The t(si) significantly influences both partially depleted operation and bulk conduction, accompanied by noticeable variation in V-th and mobility degradation. Our studies provide important information for a better understanding of the operation mechanism of two-dimensional material based transistors without junctions as well as JLTs. (C) 2019 The Japan Society of Applied Physics