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dc.contributor.authorLee, Jae-Bok-
dc.contributor.authorLim, Yi Rang-
dc.contributor.authorKatiyar, Ajit K.-
dc.contributor.authorSong, Wooseok-
dc.contributor.authorLim, Jongsun-
dc.contributor.authorBae, Sukang-
dc.contributor.authorKim, Tae-Wook-
dc.contributor.authorLee, Seoung-Ki-
dc.contributor.authorAhn, Jong-Hyun-
dc.date.accessioned2024-01-19T19:03:37Z-
dc.date.available2024-01-19T19:03:37Z-
dc.date.created2021-09-04-
dc.date.issued2019-10-
dc.identifier.issn0935-9648-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/119527-
dc.description.abstractFunctional van der Waals heterojunctions of transition metal dichalcogenides are emerging as a potential candidate for the basis of next-generation logic devices and optoelectronics. However, the complexity of synthesis processes so far has delayed the successful integration of the heterostructure device array within a large scale, which is necessary for practical applications. Here, a direct synthesis method is introduced to fabricate an array of self-assembled WSe2/MoS2 heterostructures through facile solution-based directional precipitation. By manipulating the internal convection flow (i.e., Marangoni flow) of the solution, the WSe2 wires are selectively stacked over the MoS2 wires at a specific angle, which enables the formation of parallel- and cross-aligned heterostructures. The realized WSe2/MoS2-based p-n heterojunction shows not only high rectification (ideality factor: 1.18) but also promising optoelectrical properties with a high responsivity of 5.39 A W-1 and response speed of 16 mu s. As a feasible application, a WSe2/MoS2-based photodiode array (10 x 10) is demonstrated, which proves that the photosensing system can detect the position and intensity of an external light source. The solution-based growth of hierarchical structures with various alignments could offer a method for the further development of large-area electronic and optoelectronic applications.-
dc.languageEnglish-
dc.publisherWILEY-V C H VERLAG GMBH-
dc.subjectP-N-JUNCTION-
dc.subjectLARGE-AREA-
dc.subjectEPITAXIAL-GROWTH-
dc.subjectTHIN-FILMS-
dc.subjectMOS2-
dc.subjectHETEROJUNCTION-
dc.subjectLAYERS-
dc.subjectENHANCEMENT-
dc.subjectFABRICATION-
dc.subjectTRANSITION-
dc.titleDirect Synthesis of a Self-Assembled WSe2/MoS2 Heterostructure Array and its Optoelectrical Properties-
dc.typeArticle-
dc.identifier.doi10.1002/adma.201904194-
dc.description.journalClass1-
dc.identifier.bibliographicCitationADVANCED MATERIALS, v.31, no.43-
dc.citation.titleADVANCED MATERIALS-
dc.citation.volume31-
dc.citation.number43-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.identifier.wosid000486210100001-
dc.identifier.scopusid2-s2.0-85073679960-
dc.relation.journalWebOfScienceCategoryChemistry, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryChemistry, Physical-
dc.relation.journalWebOfScienceCategoryNanoscience & Nanotechnology-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.relation.journalWebOfScienceCategoryPhysics, Condensed Matter-
dc.relation.journalResearchAreaChemistry-
dc.relation.journalResearchAreaScience & Technology - Other Topics-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalResearchAreaPhysics-
dc.type.docTypeArticle-
dc.subject.keywordPlusP-N-JUNCTION-
dc.subject.keywordPlusLARGE-AREA-
dc.subject.keywordPlusEPITAXIAL-GROWTH-
dc.subject.keywordPlusTHIN-FILMS-
dc.subject.keywordPlusMOS2-
dc.subject.keywordPlusHETEROJUNCTION-
dc.subject.keywordPlusLAYERS-
dc.subject.keywordPlusENHANCEMENT-
dc.subject.keywordPlusFABRICATION-
dc.subject.keywordPlusTRANSITION-
dc.subject.keywordAuthorheterojunctions-
dc.subject.keywordAuthorMarangoni flow-
dc.subject.keywordAuthorphotodetectors-
dc.subject.keywordAuthorp-n junctions-
dc.subject.keywordAuthortransition-metal dichalcogenides-
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