Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, Jae-Bok | - |
dc.contributor.author | Lim, Yi Rang | - |
dc.contributor.author | Katiyar, Ajit K. | - |
dc.contributor.author | Song, Wooseok | - |
dc.contributor.author | Lim, Jongsun | - |
dc.contributor.author | Bae, Sukang | - |
dc.contributor.author | Kim, Tae-Wook | - |
dc.contributor.author | Lee, Seoung-Ki | - |
dc.contributor.author | Ahn, Jong-Hyun | - |
dc.date.accessioned | 2024-01-19T19:03:37Z | - |
dc.date.available | 2024-01-19T19:03:37Z | - |
dc.date.created | 2021-09-04 | - |
dc.date.issued | 2019-10 | - |
dc.identifier.issn | 0935-9648 | - |
dc.identifier.uri | https://pubs.kist.re.kr/handle/201004/119527 | - |
dc.description.abstract | Functional van der Waals heterojunctions of transition metal dichalcogenides are emerging as a potential candidate for the basis of next-generation logic devices and optoelectronics. However, the complexity of synthesis processes so far has delayed the successful integration of the heterostructure device array within a large scale, which is necessary for practical applications. Here, a direct synthesis method is introduced to fabricate an array of self-assembled WSe2/MoS2 heterostructures through facile solution-based directional precipitation. By manipulating the internal convection flow (i.e., Marangoni flow) of the solution, the WSe2 wires are selectively stacked over the MoS2 wires at a specific angle, which enables the formation of parallel- and cross-aligned heterostructures. The realized WSe2/MoS2-based p-n heterojunction shows not only high rectification (ideality factor: 1.18) but also promising optoelectrical properties with a high responsivity of 5.39 A W-1 and response speed of 16 mu s. As a feasible application, a WSe2/MoS2-based photodiode array (10 x 10) is demonstrated, which proves that the photosensing system can detect the position and intensity of an external light source. The solution-based growth of hierarchical structures with various alignments could offer a method for the further development of large-area electronic and optoelectronic applications. | - |
dc.language | English | - |
dc.publisher | WILEY-V C H VERLAG GMBH | - |
dc.subject | P-N-JUNCTION | - |
dc.subject | LARGE-AREA | - |
dc.subject | EPITAXIAL-GROWTH | - |
dc.subject | THIN-FILMS | - |
dc.subject | MOS2 | - |
dc.subject | HETEROJUNCTION | - |
dc.subject | LAYERS | - |
dc.subject | ENHANCEMENT | - |
dc.subject | FABRICATION | - |
dc.subject | TRANSITION | - |
dc.title | Direct Synthesis of a Self-Assembled WSe2/MoS2 Heterostructure Array and its Optoelectrical Properties | - |
dc.type | Article | - |
dc.identifier.doi | 10.1002/adma.201904194 | - |
dc.description.journalClass | 1 | - |
dc.identifier.bibliographicCitation | ADVANCED MATERIALS, v.31, no.43 | - |
dc.citation.title | ADVANCED MATERIALS | - |
dc.citation.volume | 31 | - |
dc.citation.number | 43 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.identifier.wosid | 000486210100001 | - |
dc.identifier.scopusid | 2-s2.0-85073679960 | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Physical | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.type.docType | Article | - |
dc.subject.keywordPlus | P-N-JUNCTION | - |
dc.subject.keywordPlus | LARGE-AREA | - |
dc.subject.keywordPlus | EPITAXIAL-GROWTH | - |
dc.subject.keywordPlus | THIN-FILMS | - |
dc.subject.keywordPlus | MOS2 | - |
dc.subject.keywordPlus | HETEROJUNCTION | - |
dc.subject.keywordPlus | LAYERS | - |
dc.subject.keywordPlus | ENHANCEMENT | - |
dc.subject.keywordPlus | FABRICATION | - |
dc.subject.keywordPlus | TRANSITION | - |
dc.subject.keywordAuthor | heterojunctions | - |
dc.subject.keywordAuthor | Marangoni flow | - |
dc.subject.keywordAuthor | photodetectors | - |
dc.subject.keywordAuthor | p-n junctions | - |
dc.subject.keywordAuthor | transition-metal dichalcogenides | - |
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