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dc.contributor.authorCho, Kyungjune-
dc.contributor.authorPak, Jinsu-
dc.contributor.authorChung, Seungjun-
dc.contributor.authorLee, Takhee-
dc.date.accessioned2024-01-19T19:30:36Z-
dc.date.available2024-01-19T19:30:36Z-
dc.date.created2021-09-05-
dc.date.issued2019-09-
dc.identifier.issn1936-0851-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/119625-
dc.description.abstractThe interface engineering of two-dimensional (2D) transition-metal dichalcogenides (TMDs) has been regarded as a promising strategy to modulate their outstanding electrical and optoelectronic properties because of their inherent 2D nature and large surface-to-volume ratio. In particular, introducing organic molecules and polymers directly onto the surface of TMDs has been explored to passivate the surface defects or achieve better interfacial properties with neighboring surfaces efficiently, thus leading to great opportunities for the realization of high-performance TMD-based applications. This review provides recent progress in the interface engineering of TMDs with organic molecules and polymers corresponding to the modulation of their electrical and optoelectronic characteristics. Depending on the interfaces between the surface of TMDs and dielectric, conductive contacts or the ambient environment, we present various strategies to introduce an organic interlayer from materials to processing. In addition, the role of native defects on the surface of TMDs, such as adatoms or vacancies, in determining their electrical characteristics is also discussed in detail. Finally, the future challenges and opportunities associated with the interface engineering are highlighted.-
dc.languageEnglish-
dc.publisherAMER CHEMICAL SOC-
dc.subjectFIELD-EFFECT TRANSISTORS-
dc.subjectFEW-LAYER MOS2-
dc.subjectCHEMICAL-VAPOR-DEPOSITION-
dc.subjectHEXAGONAL BORON-NITRIDE-
dc.subjectHIGH-PERFORMANCE-
dc.subjectCHARGE-TRANSFER-
dc.subjectMONOLAYER MOS2-
dc.subjectTRANSPORT-PROPERTIES-
dc.subject2-DIMENSIONAL MOS2-
dc.subjectELECTRICAL CONTACT-
dc.titleRecent Advances in Interface Engineering of Transition-Metal Dichalcogenides with Organic Molecules and Polymers-
dc.typeArticle-
dc.identifier.doi10.1021/acsnano.9b02540-
dc.description.journalClass1-
dc.identifier.bibliographicCitationACS NANO, v.13, no.9, pp.9713 - 9734-
dc.citation.titleACS NANO-
dc.citation.volume13-
dc.citation.number9-
dc.citation.startPage9713-
dc.citation.endPage9734-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.identifier.wosid000487859600005-
dc.identifier.scopusid2-s2.0-85071723220-
dc.relation.journalWebOfScienceCategoryChemistry, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryChemistry, Physical-
dc.relation.journalWebOfScienceCategoryNanoscience & Nanotechnology-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalResearchAreaChemistry-
dc.relation.journalResearchAreaScience & Technology - Other Topics-
dc.relation.journalResearchAreaMaterials Science-
dc.type.docTypeReview-
dc.subject.keywordPlusFIELD-EFFECT TRANSISTORS-
dc.subject.keywordPlusFEW-LAYER MOS2-
dc.subject.keywordPlusCHEMICAL-VAPOR-DEPOSITION-
dc.subject.keywordPlusHEXAGONAL BORON-NITRIDE-
dc.subject.keywordPlusHIGH-PERFORMANCE-
dc.subject.keywordPlusCHARGE-TRANSFER-
dc.subject.keywordPlusMONOLAYER MOS2-
dc.subject.keywordPlusTRANSPORT-PROPERTIES-
dc.subject.keywordPlus2-DIMENSIONAL MOS2-
dc.subject.keywordPlusELECTRICAL CONTACT-
dc.subject.keywordAuthortwo-dimensional materials-
dc.subject.keywordAuthortransition-metal dichalcogenides-
dc.subject.keywordAuthorsurface engineering-
dc.subject.keywordAuthorinterface engineering-
dc.subject.keywordAuthorcontact engineering-
dc.subject.keywordAuthormolecular treatment-
dc.subject.keywordAuthororganic molecules-
dc.subject.keywordAuthororganic polymers-
dc.subject.keywordAuthorelectric transport properties-
dc.subject.keywordAuthorcharge injection properties-
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