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dc.contributor.authorRhim, J.-
dc.contributor.authorZeng, X.-
dc.contributor.authorHuang, Z.-
dc.contributor.authorChalamalasetti, S.R.-
dc.contributor.authorFiorentino, M.-
dc.contributor.authorBeausoleil, R.-
dc.contributor.authorLee, M.-J.-
dc.date.accessioned2024-01-19T20:01:03Z-
dc.date.available2024-01-19T20:01:03Z-
dc.date.created2022-01-10-
dc.date.issued2019-06-
dc.identifier.issn2410-390X-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/119907-
dc.description.abstractWe present a single-photon sensor based on the single-photon avalanche diode (SPAD) that is suitable for low-cost and low-voltage light detection and ranging (LiDAR) applications. It is implemented in a zero-change standard 0.18-?m complementary metal oxide semiconductor process at the minimum cost by excluding any additional processing step for customized doping profiles. The SPAD is based on circular shaped P+/N-well junction of 8-?m diameter, and it achieves low breakdown voltage below 10 V so that the operation voltage of the single-photon sensor can be minimized. The quenching and reset circuit is integrated monolithically to capture photon-generated output pulses for measurement. A complete characterization of our single-photon sensor is provided. ? 2019 by the authors. Licensee MDPI, Basel, Switzerland.-
dc.languageEnglish-
dc.publisherMDPI-
dc.titleMonolithically-integrated single-photon avalanche diode in a zero-change standard cmos process for low-cost and low-voltage lidar application-
dc.typeArticle-
dc.identifier.doi10.3390/instruments3020033-
dc.description.journalClass1-
dc.identifier.bibliographicCitationInstruments, v.3, no.2-
dc.citation.titleInstruments-
dc.citation.volume3-
dc.citation.number2-
dc.description.journalRegisteredClassscopus-
dc.identifier.scopusid2-s2.0-85118803828-
dc.type.docTypeArticle-
dc.subject.keywordAuthorMonolithic integration-
dc.subject.keywordAuthorSingle photon avalanche diode-
dc.subject.keywordAuthorZero-change standard CMOS technology-
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