Field Effect Transistors Based on One-Dimensional, Metal-Oxide Semiconducting Nanofiber Mats

Abstract

Metal-oxide semiconductors are very promising alternatives to amorphous and polycrystalline Si semiconductors. In addition to thin-film metal-oxide semiconductors, nanostructured metal-oxide semiconductors have also attracted considerable attention due to their interesting physical properties for versatile potential applications. Here, we report on metal-oxide semiconducting (InZnO and HfInZnO) nanofiber mats prepared by electrospinning. Thermal gravimetric analyses (TGA) and X-ray diffraction (XRD) measurements were carried out so as to investigate the phase transition from as-spun metal precursor/polymer matrix composite nanofibers mats to metal-oxide nanofiber mats. We fabricated field effect transistor (FETs) based on InZnO and HfInZnO nanofiber mats, and both FETs showed proper n-type transfer and output characteristics. FETs based on InZnO nanofiber mats-based FETs exhibited superior device performance: negligible hysteresis, a decent electron mobility of 5.49 cm(2)/Vs, and a good on/off current ratio of 10(7).