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dc.contributor.authorPak, Jinsu-
dc.contributor.authorCho, Kyungjune-
dc.contributor.authorKim, Jae-Keun-
dc.contributor.authorJang, Yeonsik-
dc.contributor.authorShin, Jiwon-
dc.contributor.authorKim, Jaeyoung-
dc.contributor.authorSeo, Junseok-
dc.contributor.authorChung, Seungjun-
dc.contributor.authorLee, Takhee-
dc.date.accessioned2024-01-19T20:32:53Z-
dc.date.available2024-01-19T20:32:53Z-
dc.date.created2022-01-10-
dc.date.issued2019-03-
dc.identifier.issn2399-1984-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/120261-
dc.description.abstractControlling trapped charges at the interface between a two-dimensional (2D) material and SiO2 is crucial for the stable electrical characteristics in field-effect transistors (FETs). Typically, gate-source bias has been used to modulate the charge trapping process with a narrow dielectric layer with a high gate electric field. Here, we observed that charge trapping can also be affected by the lateral drain-source voltage (V-DS) in the FET structure, as well as by the gate-source bias. Through multiple V-DS sweeps with increasing measurement ranges of the V-DS, we demonstrated that the charge trapping process could be modulated by the range of the applied lateral electric field. Moreover, we inserted a hexagonal boron nitride (h-BN) layer between the MoS2 and SiO2 layer to explore the charge trapping behavior when abetter interface is formed. This study provides a deeper understanding of controlling the electrical characteristics with interface-trapped carriers and lateral electrical fields in 2D material-based transistors.-
dc.languageEnglish-
dc.publisherIOP PUBLISHING LTD-
dc.titleTrapped charge modulation at the MoS2/SiO2 interface by a lateral electric field in MoS(2 )field-effect transistors-
dc.typeArticle-
dc.identifier.doi10.1088/2399-1984/aafc3a-
dc.description.journalClass1-
dc.identifier.bibliographicCitationNANO FUTURES, v.3, no.1-
dc.citation.titleNANO FUTURES-
dc.citation.volume3-
dc.citation.number1-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.identifier.wosid000458247100002-
dc.identifier.scopusid2-s2.0-85065038202-
dc.relation.journalWebOfScienceCategoryNanoscience & Nanotechnology-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.relation.journalResearchAreaScience & Technology - Other Topics-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalResearchAreaPhysics-
dc.type.docTypeArticle-
dc.subject.keywordAuthorhigh electric fields-
dc.subject.keywordAuthorMoS2-
dc.subject.keywordAuthorfield-effect transistors-
dc.subject.keywordAuthorcharge trapping-
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KIST Article > 2019
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