Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Pak, Jinsu | - |
dc.contributor.author | Cho, Kyungjune | - |
dc.contributor.author | Kim, Jae-Keun | - |
dc.contributor.author | Jang, Yeonsik | - |
dc.contributor.author | Shin, Jiwon | - |
dc.contributor.author | Kim, Jaeyoung | - |
dc.contributor.author | Seo, Junseok | - |
dc.contributor.author | Chung, Seungjun | - |
dc.contributor.author | Lee, Takhee | - |
dc.date.accessioned | 2024-01-19T20:32:53Z | - |
dc.date.available | 2024-01-19T20:32:53Z | - |
dc.date.created | 2022-01-10 | - |
dc.date.issued | 2019-03 | - |
dc.identifier.issn | 2399-1984 | - |
dc.identifier.uri | https://pubs.kist.re.kr/handle/201004/120261 | - |
dc.description.abstract | Controlling trapped charges at the interface between a two-dimensional (2D) material and SiO2 is crucial for the stable electrical characteristics in field-effect transistors (FETs). Typically, gate-source bias has been used to modulate the charge trapping process with a narrow dielectric layer with a high gate electric field. Here, we observed that charge trapping can also be affected by the lateral drain-source voltage (V-DS) in the FET structure, as well as by the gate-source bias. Through multiple V-DS sweeps with increasing measurement ranges of the V-DS, we demonstrated that the charge trapping process could be modulated by the range of the applied lateral electric field. Moreover, we inserted a hexagonal boron nitride (h-BN) layer between the MoS2 and SiO2 layer to explore the charge trapping behavior when abetter interface is formed. This study provides a deeper understanding of controlling the electrical characteristics with interface-trapped carriers and lateral electrical fields in 2D material-based transistors. | - |
dc.language | English | - |
dc.publisher | IOP PUBLISHING LTD | - |
dc.title | Trapped charge modulation at the MoS2/SiO2 interface by a lateral electric field in MoS(2 )field-effect transistors | - |
dc.type | Article | - |
dc.identifier.doi | 10.1088/2399-1984/aafc3a | - |
dc.description.journalClass | 1 | - |
dc.identifier.bibliographicCitation | NANO FUTURES, v.3, no.1 | - |
dc.citation.title | NANO FUTURES | - |
dc.citation.volume | 3 | - |
dc.citation.number | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.identifier.wosid | 000458247100002 | - |
dc.identifier.scopusid | 2-s2.0-85065038202 | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.type.docType | Article | - |
dc.subject.keywordAuthor | high electric fields | - |
dc.subject.keywordAuthor | MoS2 | - |
dc.subject.keywordAuthor | field-effect transistors | - |
dc.subject.keywordAuthor | charge trapping | - |
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