Wafer-Scale van der Waals Heterostructures with Ultraclean Interfaces via the Aid of Viscoelastic Polymer
- Authors
- Boandoh, Stephen; Agyapong-Fordjour, Frederick Osei-Tutu; Choi, Soo Ho; Lee, Joo Song; Park, Ji-Hoon; Ko, Hayoung; Han, Gyeongtak; Yun, Seok Joon; Park, Sehwan; Kim, Young-Min; Yang, Woochul; Lee, Young Hee; Kim, Soo Min; Kim, Ki Kang
- Issue Date
- 2019-01-09
- Publisher
- American Chemical Society
- Citation
- ACS Applied Materials & Interfaces, v.11, no.1, pp.1579 - 1586
- Abstract
- Two-dimensional (2D) van der Waals (vdW) heterostructures exhibit novel physical and chemical properties, allowing the development of unprecedented electronic, optical, and electrochemical devices. However, the construction of wafer scale vdW heterostructures for practical applications is still limited due to the lack of well-established growth and transfer techniques. Herein, we report a method for the fabrication of wafer-scale 2D vdW heterostructures with an ultraclean interface between layers via the aid of a freestanding viscoelastic polymer support layer (VEPSL). The low glass transition temperature (T-g) and viscoelastic nature of the VEPSL ensure absolute conformal contact between 2D layers, enabling the easy pick-up of layers and attaching to other 2D layers. This eventually leads to the construction of random sequence 2D vdW heterostructures such as molybdenum disulfide/tungsten disulfide/molybdenum diselenide/tungsten diselenide/hexagonal boron nitride. Furthermore, the VEPSL allows the conformal transfer of 2D vdW heterostructures onto arbitrary substrates, irrespective of surface roughness. To demonstrate the significance of the ultraclean interface, the fabricated molybdenum disulfide/graphene heterostructure employed as an electrocatalyst yielded excellent results of 73.1 mV.dec(-1) for the Tafel slope and 0.12 k Omega of charge transfer resistance, which are almost twice as low as that of the impurity-trapped heterostructure.
- Keywords
- GLASS-TRANSITION TEMPERATURE; VERTICAL HETEROSTRUCTURES; PHOTOCURRENT GENERATION; 2-DIMENSIONAL MATERIALS; GRAPHENE TRANSFER; CHARGE-TRANSFER; LARGE-AREA; FILMS; MOS2; EVOLUTION; GLASS-TRANSITION TEMPERATURE; VERTICAL HETEROSTRUCTURES; PHOTOCURRENT GENERATION; 2-DIMENSIONAL MATERIALS; GRAPHENE TRANSFER; CHARGE-TRANSFER; LARGE-AREA; FILMS; MOS2; EVOLUTION; van der Waals heterostructure; glass transition temperature; viscoelastic polymer support layer; conformal contact; ultraclean interface
- ISSN
- 1944-8244
- URI
- https://pubs.kist.re.kr/handle/201004/120473
- DOI
- 10.1021/acsami.8b16261
- Appears in Collections:
- KIST Article > 2019
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