Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, Sanghyeon | - |
dc.contributor.author | Han, Jae-Hoon | - |
dc.contributor.author | Choi, Won Jun | - |
dc.contributor.author | Song, Jin Dong | - |
dc.contributor.author | Kim, Hyung-jun | - |
dc.date.accessioned | 2024-01-19T21:03:11Z | - |
dc.date.available | 2024-01-19T21:03:11Z | - |
dc.date.created | 2021-09-05 | - |
dc.date.issued | 2019-01 | - |
dc.identifier.issn | 0374-4884 | - |
dc.identifier.uri | https://pubs.kist.re.kr/handle/201004/120522 | - |
dc.description.abstract | Recently, heterogeneous integration has become more important in enhancing device performance and creating new functions. For this purpose, wafer bonding can provide a straightforward method to integrate different materials, regardless of lattice mismatch. Here, we review recent application spaces using low-temperature wafer bonding by classifying wafer bonding into direct bonding, oxide bonding, and metal bonding. We show that bonding materials and interfaces have an important role in achieving high-performance semiconductor devices. | - |
dc.language | English | - |
dc.publisher | KOREAN PHYSICAL SOC | - |
dc.subject | FIELD-EFFECT TRANSISTORS | - |
dc.subject | GAAS SOLAR-CELL | - |
dc.subject | SI SUBSTRATE | - |
dc.subject | WAVE-GUIDES | - |
dc.subject | MU-M | - |
dc.subject | WAFER | - |
dc.subject | GE | - |
dc.subject | SILICON | - |
dc.subject | MOSFETS | - |
dc.subject | LASERS | - |
dc.title | Functionalized Bonding Materials and Interfaces for Heterogeneously Layer-Stacked Applications | - |
dc.type | Article | - |
dc.identifier.doi | 10.3938/jkps.74.82 | - |
dc.description.journalClass | 1 | - |
dc.identifier.bibliographicCitation | JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.74, no.2, pp.82 - 87 | - |
dc.citation.title | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | - |
dc.citation.volume | 74 | - |
dc.citation.number | 2 | - |
dc.citation.startPage | 82 | - |
dc.citation.endPage | 87 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | kci | - |
dc.identifier.kciid | ART002433992 | - |
dc.identifier.wosid | 000456794400001 | - |
dc.identifier.scopusid | 2-s2.0-85060653034 | - |
dc.relation.journalWebOfScienceCategory | Physics, Multidisciplinary | - |
dc.relation.journalResearchArea | Physics | - |
dc.type.docType | Article; Proceedings Paper | - |
dc.subject.keywordPlus | FIELD-EFFECT TRANSISTORS | - |
dc.subject.keywordPlus | GAAS SOLAR-CELL | - |
dc.subject.keywordPlus | SI SUBSTRATE | - |
dc.subject.keywordPlus | WAVE-GUIDES | - |
dc.subject.keywordPlus | MU-M | - |
dc.subject.keywordPlus | WAFER | - |
dc.subject.keywordPlus | GE | - |
dc.subject.keywordPlus | SILICON | - |
dc.subject.keywordPlus | MOSFETS | - |
dc.subject.keywordPlus | LASERS | - |
dc.subject.keywordAuthor | Wafer bonding | - |
dc.subject.keywordAuthor | Heterogeneous integration | - |
dc.subject.keywordAuthor | Bonding interface | - |
dc.subject.keywordAuthor | Monolithic 3D integration | - |
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