Full metadata record
DC Field | Value | Language |
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dc.contributor.author | Jeon, Dae-Young | - |
dc.contributor.author | Kim, Do-Kywn | - |
dc.contributor.author | Park, So Jeong | - |
dc.contributor.author | Koh, Yumin | - |
dc.contributor.author | Cho, Chu-Young | - |
dc.contributor.author | Kim, Gyu-Tae | - |
dc.contributor.author | Park, Kyung-Ho | - |
dc.date.accessioned | 2024-01-19T21:31:14Z | - |
dc.date.available | 2024-01-19T21:31:14Z | - |
dc.date.created | 2021-09-04 | - |
dc.date.issued | 2018-11-05 | - |
dc.identifier.issn | 0167-9317 | - |
dc.identifier.uri | https://pubs.kist.re.kr/handle/201004/120699 | - |
dc.description.abstract | The AlGaN/GaN high electron mobility transistor (HEMT) is considered a promising device for high-power, high-frequency, and high-temperature applications, as well as high-sensitivity sensors. However, several issues related to mobility, interface properties, and series resistance need to be clarified for a better understanding of the physical operation of AlGaN/GaN HEMTs and for further optimization of their performance. In this work, the electrical properties of AlGaN/GaN HEMTs, including the effects of series resistance, and interface properties with mobility degradation factors were investigated in detail. In addition, the low-frequency noise behavior of AlGaN/GaN HEMTs was examined with a carrier number fluctuation model that considered series resistance effects. | - |
dc.language | English | - |
dc.publisher | ELSEVIER SCIENCE BV | - |
dc.subject | ADVANCED CMOS DEVICES | - |
dc.subject | RTS FLUCTUATIONS | - |
dc.subject | NOISE | - |
dc.subject | SENSORS | - |
dc.subject | MOSFETS | - |
dc.subject | LEAKAGE | - |
dc.subject | GATE | - |
dc.title | Effects of series resistance and interface properties on the operation of AlGaN/GaN high electron mobility transistors | - |
dc.type | Article | - |
dc.identifier.doi | 10.1016/j.mee.2018.07.010 | - |
dc.description.journalClass | 1 | - |
dc.identifier.bibliographicCitation | MICROELECTRONIC ENGINEERING, v.199, pp.40 - 44 | - |
dc.citation.title | MICROELECTRONIC ENGINEERING | - |
dc.citation.volume | 199 | - |
dc.citation.startPage | 40 | - |
dc.citation.endPage | 44 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.identifier.wosid | 000445309500005 | - |
dc.identifier.scopusid | 2-s2.0-85050613855 | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Optics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Optics | - |
dc.relation.journalResearchArea | Physics | - |
dc.type.docType | Article | - |
dc.subject.keywordPlus | ADVANCED CMOS DEVICES | - |
dc.subject.keywordPlus | RTS FLUCTUATIONS | - |
dc.subject.keywordPlus | NOISE | - |
dc.subject.keywordPlus | SENSORS | - |
dc.subject.keywordPlus | MOSFETS | - |
dc.subject.keywordPlus | LEAKAGE | - |
dc.subject.keywordPlus | GATE | - |
dc.subject.keywordAuthor | AlGaN/GaN HEMTs | - |
dc.subject.keywordAuthor | Effective mobility | - |
dc.subject.keywordAuthor | Low-frequency noise and carrier number fluctuation model | - |
dc.subject.keywordAuthor | Mobility degradation factors | - |
dc.subject.keywordAuthor | Series resistance | - |
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