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dc.contributor.authorJeon, Dae-Young-
dc.contributor.authorKim, Do-Kywn-
dc.contributor.authorPark, So Jeong-
dc.contributor.authorKoh, Yumin-
dc.contributor.authorCho, Chu-Young-
dc.contributor.authorKim, Gyu-Tae-
dc.contributor.authorPark, Kyung-Ho-
dc.date.accessioned2024-01-19T21:31:14Z-
dc.date.available2024-01-19T21:31:14Z-
dc.date.created2021-09-04-
dc.date.issued2018-11-05-
dc.identifier.issn0167-9317-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/120699-
dc.description.abstractThe AlGaN/GaN high electron mobility transistor (HEMT) is considered a promising device for high-power, high-frequency, and high-temperature applications, as well as high-sensitivity sensors. However, several issues related to mobility, interface properties, and series resistance need to be clarified for a better understanding of the physical operation of AlGaN/GaN HEMTs and for further optimization of their performance. In this work, the electrical properties of AlGaN/GaN HEMTs, including the effects of series resistance, and interface properties with mobility degradation factors were investigated in detail. In addition, the low-frequency noise behavior of AlGaN/GaN HEMTs was examined with a carrier number fluctuation model that considered series resistance effects.-
dc.languageEnglish-
dc.publisherELSEVIER SCIENCE BV-
dc.subjectADVANCED CMOS DEVICES-
dc.subjectRTS FLUCTUATIONS-
dc.subjectNOISE-
dc.subjectSENSORS-
dc.subjectMOSFETS-
dc.subjectLEAKAGE-
dc.subjectGATE-
dc.titleEffects of series resistance and interface properties on the operation of AlGaN/GaN high electron mobility transistors-
dc.typeArticle-
dc.identifier.doi10.1016/j.mee.2018.07.010-
dc.description.journalClass1-
dc.identifier.bibliographicCitationMICROELECTRONIC ENGINEERING, v.199, pp.40 - 44-
dc.citation.titleMICROELECTRONIC ENGINEERING-
dc.citation.volume199-
dc.citation.startPage40-
dc.citation.endPage44-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.identifier.wosid000445309500005-
dc.identifier.scopusid2-s2.0-85050613855-
dc.relation.journalWebOfScienceCategoryEngineering, Electrical & Electronic-
dc.relation.journalWebOfScienceCategoryNanoscience & Nanotechnology-
dc.relation.journalWebOfScienceCategoryOptics-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.relation.journalResearchAreaEngineering-
dc.relation.journalResearchAreaScience & Technology - Other Topics-
dc.relation.journalResearchAreaOptics-
dc.relation.journalResearchAreaPhysics-
dc.type.docTypeArticle-
dc.subject.keywordPlusADVANCED CMOS DEVICES-
dc.subject.keywordPlusRTS FLUCTUATIONS-
dc.subject.keywordPlusNOISE-
dc.subject.keywordPlusSENSORS-
dc.subject.keywordPlusMOSFETS-
dc.subject.keywordPlusLEAKAGE-
dc.subject.keywordPlusGATE-
dc.subject.keywordAuthorAlGaN/GaN HEMTs-
dc.subject.keywordAuthorEffective mobility-
dc.subject.keywordAuthorLow-frequency noise and carrier number fluctuation model-
dc.subject.keywordAuthorMobility degradation factors-
dc.subject.keywordAuthorSeries resistance-
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KIST Article > 2018
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