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dc.contributor.authorDo, Hyun Woo-
dc.contributor.authorKwon, Yong Hun-
dc.contributor.authorPark, Young-Il-
dc.contributor.authorKim, Yong Hoon-
dc.contributor.authorCho, Hyung Koun-
dc.contributor.authorKim, Honggon-
dc.date.accessioned2024-01-19T23:04:32Z-
dc.date.available2024-01-19T23:04:32Z-
dc.date.created2022-01-25-
dc.date.issued2018-03-
dc.identifier.issn1947-2935-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/121627-
dc.description.abstractStoichiometric CuInSe2 chalcopyrite photoabsorbers have been synthesized using multi-bath electrodeposition and a three-step selenization process with non-toxic selenium pellets. Among many approaches used to prepare Cu-In metal precursors, multi-stacked electrodeposition is a promising method because of its low-cost process, easy control of the thickness ratio of the Cu-In metal layers, efficient usage of resources, and large-scale mass production. In this study, copper (Cu) and indium (In) metallic precursors with an appropriate thickness ratio were fabricated on Mo/SLG (soda-lime glass). The selenization process was completed in selenium (Se)rich atmosphere at three different temperatures in sequence (120, 350, and 550 degrees C). Unlike the conventional two-step approach, which has adhesion problems, the CuInSe2 films exhibited a relatively smooth and dense morphology with large, well-crystallized grains after selenization and potassium cyanide etching. The thermal treatment at 120 degrees C resulted in intermetallic Cu-In alloys and suppressed excessive vaporization of metallic In and the formation of Kirkendall voids. The CuInSe2 solar cell with a structure of Ni-Al grid/ZnO:Al/i-ZnO/n-CdS/p-CuInSe2/Mo/SLG showed a cell efficiency exceeding 5%.-
dc.languageEnglish-
dc.publisherAMER SCIENTIFIC PUBLISHERS-
dc.titleCopper Indium Selenide Solar Cells Fabricated from Electrodeposited Copper/Indium Multi-Stacked Precursors and a Three-Step Selenization Process-
dc.typeArticle-
dc.identifier.doi10.1166/sam.2018.3031-
dc.description.journalClass1-
dc.identifier.bibliographicCitationSCIENCE OF ADVANCED MATERIALS, v.10, no.3, pp.383 - 388-
dc.citation.titleSCIENCE OF ADVANCED MATERIALS-
dc.citation.volume10-
dc.citation.number3-
dc.citation.startPage383-
dc.citation.endPage388-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClassscie-
dc.identifier.wosid000419758200013-
dc.relation.journalWebOfScienceCategoryNanoscience & Nanotechnology-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.relation.journalResearchAreaScience & Technology - Other Topics-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalResearchAreaPhysics-
dc.type.docTypeArticle-
dc.subject.keywordPlusCUINSE2 THIN-FILMS-
dc.subject.keywordPlusCU-
dc.subject.keywordPlusDEPOSITION-
dc.subject.keywordPlusGROWTH-
dc.subject.keywordPlusALLOY-
dc.subject.keywordAuthorPhotoabsorber-
dc.subject.keywordAuthorCuInSe2-
dc.subject.keywordAuthorElectrodeposition-
dc.subject.keywordAuthorSolar Cell-
dc.subject.keywordAuthorMulti-Stacked-
dc.subject.keywordAuthorThree-Step Selenization-
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KIST Article > 2018
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