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dc.contributor.authorLee, Young Tack-
dc.contributor.authorJeon, Pyo Jin-
dc.contributor.authorHan, Jae Hyun-
dc.contributor.authorAhn, Jongtae-
dc.contributor.authorLee, Hyo Sun-
dc.contributor.authorLim, June Yeong-
dc.contributor.authorChoi, Won Kook-
dc.contributor.authorSong, Jin Dong-
dc.contributor.authorPark, Min-Chul-
dc.contributor.authorIm, Seongil-
dc.contributor.authorHwang, Do Kyung-
dc.date.accessioned2024-01-20T00:00:34Z-
dc.date.available2024-01-20T00:00:34Z-
dc.date.created2021-09-03-
dc.date.issued2017-12-15-
dc.identifier.issn1616-301X-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/121916-
dc.description.abstract2D layered van der Waals (vdW) atomic crystals are an emerging class of new materials that are receiving increasing attention owing to their unique properties. In particular, the dangling-bond-free surface of 2D materials enables integration of differently dimensioned materials into mixed-dimensional vdW heterostructures. Such mixed-dimensional heterostructures herald new opportunities for conducting fundamental nanoscience studies and developing nanoscale electronic/optoelectronic applications. This study presents a 1D ZnO nanowire (n-type)-2D WSe2 nanosheet (p-type) vdW heterojunction diode for photodetection and imaging process. After amorphous fluoro-polymer passivation, the ZnO-WSe2 diode shows superior performance with a much-enhanced rectification (ON/OFF) ratio of over 106 and an ideality factor of 3.4-3.6 due to the carbon-fluorine (C-F) dipole effect. This heterojunction device exhibits spectral photoresponses from ultraviolet (400 nm) to near infrared (950 nm). Furthermore, a prototype visible imager is demonstrated using the ZnO-WSe2 heterojunction diode as an imaging pixel. To the best of our knowledge, this is the first demonstration of an optoelectronic device based on a 1D-2D hybrid vdW heterojunction. This approach using a 1D ZnO-2D WSe2 heterojunction paves the way for the further development of electronic/optoelectronic applications using mixed-dimensional vdW heterostructures.-
dc.languageEnglish-
dc.publisherWILEY-V C H VERLAG GMBH-
dc.subjectFIELD-EFFECT TRANSISTORS-
dc.subject2D SEMICONDUCTOR-
dc.subjectHIGH-PERFORMANCE-
dc.subjectTOP-GATE-
dc.subjectMETAL-
dc.subjectTRANSITION-
dc.subjectGRAPHENE-
dc.subjectOPTOELECTRONICS-
dc.subjectJUNCTIONS-
dc.subjectDIODE-
dc.titleMixed-Dimensional 1D ZnO-2D WSe2 van der Waals Heterojunction Device for Photosensors-
dc.typeArticle-
dc.identifier.doi10.1002/adfm.201703822-
dc.description.journalClass1-
dc.identifier.bibliographicCitationADVANCED FUNCTIONAL MATERIALS, v.27, no.47-
dc.citation.titleADVANCED FUNCTIONAL MATERIALS-
dc.citation.volume27-
dc.citation.number47-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.identifier.wosid000417921800004-
dc.identifier.scopusid2-s2.0-85038008759-
dc.relation.journalWebOfScienceCategoryChemistry, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryChemistry, Physical-
dc.relation.journalWebOfScienceCategoryNanoscience & Nanotechnology-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.relation.journalWebOfScienceCategoryPhysics, Condensed Matter-
dc.relation.journalResearchAreaChemistry-
dc.relation.journalResearchAreaScience & Technology - Other Topics-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalResearchAreaPhysics-
dc.type.docTypeArticle-
dc.subject.keywordPlusFIELD-EFFECT TRANSISTORS-
dc.subject.keywordPlus2D SEMICONDUCTOR-
dc.subject.keywordPlusHIGH-PERFORMANCE-
dc.subject.keywordPlusTOP-GATE-
dc.subject.keywordPlusMETAL-
dc.subject.keywordPlusTRANSITION-
dc.subject.keywordPlusGRAPHENE-
dc.subject.keywordPlusOPTOELECTRONICS-
dc.subject.keywordPlusJUNCTIONS-
dc.subject.keywordPlusDIODE-
dc.subject.keywordAuthor1D ZnO-
dc.subject.keywordAuthor2D WSe2-
dc.subject.keywordAuthorimagers-
dc.subject.keywordAuthormixed-dimensional van der Waals heterojunctions-
dc.subject.keywordAuthorphotodetectors-
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KIST Article > 2017
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