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dc.contributor.author최원국-
dc.date.accessioned2024-01-20T01:32:44Z-
dc.date.available2024-01-20T01:32:44Z-
dc.date.created2022-01-10-
dc.date.issued2017-05-
dc.identifier.issn1225-2336-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/122770-
dc.languageKorean-
dc.publisher한국물리학회-
dc.titleNonvolatile Memory and Optoelectronic Devices with 2-dimensional Black Phosphorous Semiconductor-
dc.title.alternative2차원 흑린 반도체 비휘발성 메모리 및 광소자-
dc.typeArticle-
dc.description.journalClass3-
dc.identifier.bibliographicCitation물리학과 첨단기술 = Physics & High Technology, v.26, no.5, pp.9 - 13-
dc.citation.title물리학과 첨단기술 = Physics & High Technology-
dc.citation.volume26-
dc.citation.number5-
dc.citation.startPage9-
dc.citation.endPage13-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClassother-
dc.subject.keywordAuthorblack phosphoros-
dc.subject.keywordAuthor2D material-
dc.subject.keywordAuthorhigh electron mobility-
dc.subject.keywordAuthornonvolatile memory-
dc.subject.keywordAuthorultrafast mode locking-
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KIST Article > 2017
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