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dc.contributor.authorKim, Soo Jin-
dc.contributor.authorJang, Mi-
dc.contributor.authorYang, Hee Yeon-
dc.contributor.authorCho, Jinhan-
dc.contributor.authorLim, Ho Sun-
dc.contributor.authorYang, Hoichang-
dc.contributor.authorLim, Jung Ah-
dc.date.accessioned2024-01-20T01:34:20Z-
dc.date.available2024-01-20T01:34:20Z-
dc.date.created2021-09-01-
dc.date.issued2017-04-05-
dc.identifier.issn1944-8244-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/122854-
dc.description.abstractWe report the instantaneous pulsed-light cross linking of polymer gate dielectrics on a flexible substrate by using intensely pulsed white light (IPWL) irradiation. Irradiation with IPWL for only 1.8 s of a poly(4-vinylphenol) (PVP) thin film with the cross-linking agent poly(melamine-co-formaldehyde) (PMF) deposited on a plastic substrate was found to yield fully cross linked PVP films. It was confirmed that the IPWL-cross-linked PVP films have smooth pinhole free surfaces and exhibit a low leakage current density, organic solvent, resistance; and good compatibility with organic semiconductor, and that they can be used as replacements for typical PVP dielectrics that are cross-linked with time and energy intensive thermal heating processes. The synchronization of the IPWL irradiation with substrate transfer was found to enable the preparation of cross-linked PVP films on large area substrates with a highly unifirm capacitance. Flexible OTFT based on IPWL-cross-linked PVP dielectrics were found to exhibit good electrical performance that is comparable to that of devices with thermally cross-linked PVP dielectric, as well as excellent deformation stability even at a bending radius of 3 mm.-
dc.languageEnglish-
dc.publisherAmerican Chemical Society-
dc.subjectHIGH-PERFORMANCE-
dc.subjectEFFICIENT PRODUCTION-
dc.subjectFLASH-
dc.subjectTEMPERATURE-
dc.subjectNANOTUBES-
dc.subjectPOLYIMIDE-
dc.titleInstantaneous Pulsed-Light Cross-Linking of a Polymer Gate Dielectric for Flexible Organic Thin-Film Transistors-
dc.typeArticle-
dc.identifier.doi10.1021/acsami.6b14957-
dc.description.journalClass1-
dc.identifier.bibliographicCitationACS Applied Materials & Interfaces, v.9, no.13, pp.11721 - 11731-
dc.citation.titleACS Applied Materials & Interfaces-
dc.citation.volume9-
dc.citation.number13-
dc.citation.startPage11721-
dc.citation.endPage11731-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.identifier.wosid000398764100045-
dc.identifier.scopusid2-s2.0-85017180401-
dc.relation.journalWebOfScienceCategoryNanoscience & Nanotechnology-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalResearchAreaScience & Technology - Other Topics-
dc.relation.journalResearchAreaMaterials Science-
dc.type.docTypeArticle-
dc.subject.keywordPlusHIGH-PERFORMANCE-
dc.subject.keywordPlusEFFICIENT PRODUCTION-
dc.subject.keywordPlusFLASH-
dc.subject.keywordPlusTEMPERATURE-
dc.subject.keywordPlusNANOTUBES-
dc.subject.keywordPlusPOLYIMIDE-
dc.subject.keywordAuthorintensely pulsed white light-
dc.subject.keywordAuthorcross-linking-
dc.subject.keywordAuthorgate dielectric-
dc.subject.keywordAuthororganic thin-film transistors-
dc.subject.keywordAuthorflexible substrate-
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KIST Article > 2017
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