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dc.contributor.authorChoi, Jaesuk-
dc.contributor.authorSong, Jun Tae-
dc.contributor.authorJang, Ho Seong-
dc.contributor.authorChoi, Min-Jae-
dc.contributor.authorSim, Dong Min-
dc.contributor.authorYim, Soonmin-
dc.contributor.authorLim, Hunhee-
dc.contributor.authorJung, Yeon Sik-
dc.contributor.authorOh, Jihun-
dc.date.accessioned2024-01-20T02:32:15Z-
dc.date.available2024-01-20T02:32:15Z-
dc.date.created2021-09-05-
dc.date.issued2017-01-
dc.identifier.issn1738-8090-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/123240-
dc.description.abstractPhotoelectrochemical (PEC) water splitting has emerged as a potential pathway to produce sustainable and renewable chemical fuels. Here, we present a highly active Cu2O/TiO2 photocathode for H-2 production by enhancing the interfacial band-edge energetics of the TiO2 layer, which is realized by controlling the fixed charge density of the TiO2 protection layer. The band-edge engineered Cu2O/TiO2 (where TiO2 was grown at 80 A degrees C via atomic layer deposition) enhances the photocurrent density up to -2.04 mA/cm(2) at 0 V vs. RHE under 1 sun illumination, corresponding to about a 1,200% enhancement compared to the photocurrent density of the photocathode protected with TiO2 grown at 150 A degrees C. Moreover, band-edge engineering of the TiO2 protection layer prevents electron accumulation at the TiO2 layer and enhances both the Faraday efficiency and the stability for hydrogen production during the PEC water reduction reaction. This facile control over the TiO2/electrolyte interface will also provide new insight for designing highly efficient and stable protection layers for various other photoelectrodes such as Si, InP, and GaAs.-
dc.languageEnglish-
dc.publisherKOREAN INST METALS MATERIALS-
dc.subjectATOMIC LAYER-
dc.subjectDEPOSITED TIO2-
dc.subjectH-2 EVOLUTION-
dc.subjectCELLS-
dc.subjectOXIDE-
dc.subjectELECTRODES-
dc.subjectSTABILITY-
dc.subjectOXIDATION-
dc.subjectSURFACES-
dc.subjectANATASE-
dc.titleInterfacial band-edge engineered TiO2 protection layer on Cu2O photocathodes for efficient water reduction reaction-
dc.typeArticle-
dc.identifier.doi10.1007/s13391-017-6316-1-
dc.description.journalClass1-
dc.identifier.bibliographicCitationELECTRONIC MATERIALS LETTERS, v.13, no.1, pp.57 - 65-
dc.citation.titleELECTRONIC MATERIALS LETTERS-
dc.citation.volume13-
dc.citation.number1-
dc.citation.startPage57-
dc.citation.endPage65-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.description.journalRegisteredClasskci-
dc.identifier.kciidART002187468-
dc.identifier.wosid000392296900009-
dc.identifier.scopusid2-s2.0-85009445687-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalResearchAreaMaterials Science-
dc.type.docTypeArticle-
dc.subject.keywordPlusATOMIC LAYER-
dc.subject.keywordPlusDEPOSITED TIO2-
dc.subject.keywordPlusH-2 EVOLUTION-
dc.subject.keywordPlusCELLS-
dc.subject.keywordPlusOXIDE-
dc.subject.keywordPlusELECTRODES-
dc.subject.keywordPlusSTABILITY-
dc.subject.keywordPlusOXIDATION-
dc.subject.keywordPlusSURFACES-
dc.subject.keywordPlusANATASE-
dc.subject.keywordAuthorwater splitting-
dc.subject.keywordAuthorinterfacial band-edge engineering-
dc.subject.keywordAuthorTiO2-
dc.subject.keywordAuthorCu2O-
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KIST Article > 2017
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