Multifunctional Dendrimer Ligands for High Efficiency, Solution-Processed Quantum Dot Light-Emitting Diodes

Authors
Cho, IkjunJung, HeeyoungJeong, Byeong GukChang, Jun HyukKim, YounghoonChar, KookheonLee, Doh C.Lee, ChangheeCho, JinhanBae, Wan Ki
Issue Date
2017-01
Publisher
AMER CHEMICAL SOC
Citation
ACS NANO, v.11, no.1, pp.684 - 692
Abstract
We present multifunctional dendrimer ligands that serve as the charge injection controlling layer as well as the adhesive layer at the interfaces between quantum dots (QDs) and the electron transport layer (ETL) in quantum dot light-emitting diodes (QLEDs). Specifically, we use primary amine-functionalized dendrimer ligands (e.g., a series of poly(amidoamine) dendrimers (PADs, also referred to PAMAM)) that bind to the surface of QDs by replacing the native ligands (oleic acids) and also to the surface of ZnO ETL. PAD ligands control the electron injection rate from ZnO ETL into QDs by altering the electronic energy levels of the surface of ZnO ETL and thereby improve the charge balance within QDs in devices, leading to the enhancement of the device efficiency. As an ultimate achievement, the device efficiency (peak external quantum efficiency) improves by a factor of 3 by replacing the native ligands (3.86%) with PAD ligands (11.36%). In addition, multibranched dendrimer ligands keep the QD emissive layer intact during subsequent solution processing, enabling us to accomplish solution-processed QLEDs. The approach and results in the present study emphasize the importance of controlling the ligands of QDs to enhance QLED performance and also offer simple yet effective chemical mean toward all-solution-processed QLEDs.
Keywords
INP-AT-ZNSES; SEMICONDUCTOR NANOCRYSTALS; COMPOSITION GRADIENT; AUGER RECOMBINATION; SHELL THICKNESS; PERFORMANCE; DEVICES; POLYMER; INP-AT-ZNSES; SEMICONDUCTOR NANOCRYSTALS; COMPOSITION GRADIENT; AUGER RECOMBINATION; SHELL THICKNESS; PERFORMANCE; DEVICES; POLYMER; dendrimer ligands; quantum dot-based light-emitting diode; charge injection; adhesive layer; interface engineering
ISSN
1936-0851
URI
https://pubs.kist.re.kr/handle/201004/123273
DOI
10.1021/acsnano.6b07028
Appears in Collections:
KIST Article > 2017
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