Full metadata record

DC Field Value Language
dc.contributor.authorKim, Ji Hoon-
dc.contributor.authorBae, Joohyung-
dc.contributor.authorMin, Byoung-Chul-
dc.contributor.authorKim, Hyung-jun-
dc.contributor.authorChang, Joonyeon-
dc.contributor.authorKoo, Hyun Cheol-
dc.date.accessioned2024-01-20T04:33:06Z-
dc.date.available2024-01-20T04:33:06Z-
dc.date.created2021-09-04-
dc.date.issued2016-04-
dc.identifier.issn0304-8853-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/124252-
dc.description.abstractAll-electric spin transistor is demonstrated using perpendicular spins in an InAs quantum well channel. For the injection and detection of perpendicular spins in the quantum well channel, we use Tb20Fe62Co18/Co40Fe40B20 electrodes, where the Tb20Fe62Co18 layer produces the perpendicular magnetization and the Co40Fe40B20 layer enhances the spin polarization. In this spin transistor device, a gate-controlled spin signal as large as 80 m Omega is observed at 10 K without an external magnetic field. In order to confirm the spin injection and relaxation independently, we measure the three-terminal Hanle effect with an in-plane magnetic field, and obtain a spin signal of 1.7 m Omega at 10 K. These results clearly present that the electric field is an efficient way to modulate spin orientation in a strong spin-orbit interaction system. (C) 2015 Elsevier B.V. All rights reserved.-
dc.languageEnglish-
dc.publisherELSEVIER SCIENCE BV-
dc.titleAll-electric spin transistor using perpendicular spins-
dc.typeArticle-
dc.identifier.doi10.1016/j.jmmm.2015.11.056-
dc.description.journalClass1-
dc.identifier.bibliographicCitationJOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, v.403, pp.77 - 80-
dc.citation.titleJOURNAL OF MAGNETISM AND MAGNETIC MATERIALS-
dc.citation.volume403-
dc.citation.startPage77-
dc.citation.endPage80-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.identifier.wosid000366588000011-
dc.identifier.scopusid2-s2.0-84949554236-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryPhysics, Condensed Matter-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalResearchAreaPhysics-
dc.type.docTypeArticle-
dc.subject.keywordPlusINJECTION-
dc.subject.keywordPlusPRECESSION-
dc.subject.keywordPlusJUNCTION-
dc.subject.keywordPlusGAAS-
dc.subject.keywordAuthorSpin transistor-
dc.subject.keywordAuthorPerpendicular spin-
dc.subject.keywordAuthorInterface resistance-
dc.subject.keywordAuthorSchottky tunnel barrier-
Appears in Collections:
KIST Article > 2016
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML

qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE