Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, Ji Hoon | - |
dc.contributor.author | Bae, Joohyung | - |
dc.contributor.author | Min, Byoung-Chul | - |
dc.contributor.author | Kim, Hyung-jun | - |
dc.contributor.author | Chang, Joonyeon | - |
dc.contributor.author | Koo, Hyun Cheol | - |
dc.date.accessioned | 2024-01-20T04:33:06Z | - |
dc.date.available | 2024-01-20T04:33:06Z | - |
dc.date.created | 2021-09-04 | - |
dc.date.issued | 2016-04 | - |
dc.identifier.issn | 0304-8853 | - |
dc.identifier.uri | https://pubs.kist.re.kr/handle/201004/124252 | - |
dc.description.abstract | All-electric spin transistor is demonstrated using perpendicular spins in an InAs quantum well channel. For the injection and detection of perpendicular spins in the quantum well channel, we use Tb20Fe62Co18/Co40Fe40B20 electrodes, where the Tb20Fe62Co18 layer produces the perpendicular magnetization and the Co40Fe40B20 layer enhances the spin polarization. In this spin transistor device, a gate-controlled spin signal as large as 80 m Omega is observed at 10 K without an external magnetic field. In order to confirm the spin injection and relaxation independently, we measure the three-terminal Hanle effect with an in-plane magnetic field, and obtain a spin signal of 1.7 m Omega at 10 K. These results clearly present that the electric field is an efficient way to modulate spin orientation in a strong spin-orbit interaction system. (C) 2015 Elsevier B.V. All rights reserved. | - |
dc.language | English | - |
dc.publisher | ELSEVIER SCIENCE BV | - |
dc.title | All-electric spin transistor using perpendicular spins | - |
dc.type | Article | - |
dc.identifier.doi | 10.1016/j.jmmm.2015.11.056 | - |
dc.description.journalClass | 1 | - |
dc.identifier.bibliographicCitation | JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, v.403, pp.77 - 80 | - |
dc.citation.title | JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS | - |
dc.citation.volume | 403 | - |
dc.citation.startPage | 77 | - |
dc.citation.endPage | 80 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.identifier.wosid | 000366588000011 | - |
dc.identifier.scopusid | 2-s2.0-84949554236 | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.type.docType | Article | - |
dc.subject.keywordPlus | INJECTION | - |
dc.subject.keywordPlus | PRECESSION | - |
dc.subject.keywordPlus | JUNCTION | - |
dc.subject.keywordPlus | GAAS | - |
dc.subject.keywordAuthor | Spin transistor | - |
dc.subject.keywordAuthor | Perpendicular spin | - |
dc.subject.keywordAuthor | Interface resistance | - |
dc.subject.keywordAuthor | Schottky tunnel barrier | - |
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