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dc.contributor.authorYang, Hee Yeon-
dc.contributor.authorPark, Han-Wool-
dc.contributor.authorKim, Soo Jin-
dc.contributor.authorHong, Jae-Min-
dc.contributor.authorKim, Tae Whan-
dc.contributor.authorKimc, Do Hwan-
dc.contributor.authorLim, Jung Ah-
dc.date.accessioned2024-01-20T05:01:07Z-
dc.date.available2024-01-20T05:01:07Z-
dc.date.created2021-09-04-
dc.date.issued2016-02-14-
dc.identifier.issn1463-9076-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/124384-
dc.description.abstractHere we demonstrated the split-second crystallization of a liquid-crystalline conjugated polymer semiconductor induced by irradiation with intense pulsed white light (IPWL) for the efficient improvement of electrical properties of flexible thin film transistors. A few seconds of IPWL irradiation of poly(didodecylquaterthiophene-alt-didodecylbithiazole) (PQTBTz-C12) thin films generated heat energy through the photo-thermal effect, leading to the crystallization of PQTBTz-C12 and formation of nodule-like nanostructures. The IPWL-induced crystallization of PQTBTz-C12 resulted in a threefold improvement in the field-effect mobility of thin film transistors compared to as-prepared devices. The conformational change of the PQTBTz-C12 chains was found to be strongly related to the irradiation fluence. As a proof-of-concept, the IPWL treatment was successfully applied to the PQTBTz-C12 layer in flexible transistors based on plastic substrates. The performance of these flexible devices was significantly improved after only 0.6 s of IPWL treatment, without deformation of the plastic substrate.-
dc.languageEnglish-
dc.publisherROYAL SOC CHEMISTRY-
dc.subjectFIELD-EFFECT TRANSISTORS-
dc.subjectSOLAR-CELLS-
dc.subjectOXIDE-
dc.subjectCOPOLYMERS-
dc.subjectDEPOSITION-
dc.subjectSUBSTRATE-
dc.subjectINK-
dc.titleIntense pulsed light induced crystallization of a liquid-crystalline polymer semiconductor for efficient production of flexible thin-film transistors-
dc.typeArticle-
dc.identifier.doi10.1039/c5cp06989k-
dc.description.journalClass1-
dc.identifier.bibliographicCitationPHYSICAL CHEMISTRY CHEMICAL PHYSICS, v.18, no.6, pp.4627 - 4634-
dc.citation.titlePHYSICAL CHEMISTRY CHEMICAL PHYSICS-
dc.citation.volume18-
dc.citation.number6-
dc.citation.startPage4627-
dc.citation.endPage4634-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.identifier.wosid000369509100043-
dc.identifier.scopusid2-s2.0-84957536240-
dc.relation.journalWebOfScienceCategoryChemistry, Physical-
dc.relation.journalWebOfScienceCategoryPhysics, Atomic, Molecular & Chemical-
dc.relation.journalResearchAreaChemistry-
dc.relation.journalResearchAreaPhysics-
dc.type.docTypeArticle-
dc.subject.keywordPlusFIELD-EFFECT TRANSISTORS-
dc.subject.keywordPlusSOLAR-CELLS-
dc.subject.keywordPlusOXIDE-
dc.subject.keywordPlusCOPOLYMERS-
dc.subject.keywordPlusDEPOSITION-
dc.subject.keywordPlusSUBSTRATE-
dc.subject.keywordPlusINK-
dc.subject.keywordAuthorintensely pulsed white light-
dc.subject.keywordAuthorliquid crystalline polymer semiconductor-
dc.subject.keywordAuthororganic thin-film transistors-
dc.subject.keywordAuthorflexible substrate-
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KIST Article > 2016
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