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dc.contributor.authorHwang, Do Kyung-
dc.contributor.authorLee, Young Tack-
dc.contributor.authorLee, Hee Sung-
dc.contributor.authorLee, Yun Jae-
dc.contributor.authorShokouh, Seyed Hossein-
dc.contributor.authorKyhm, Ji-Hoon-
dc.contributor.authorLee, Junyeong-
dc.contributor.authorKim, Hong Hee-
dc.contributor.authorYoo, Tae-Hee-
dc.contributor.authorNam, Seung Hee-
dc.contributor.authorSon, Dong Ick-
dc.contributor.authorJu, Byeong-Kwon-
dc.contributor.authorPark, Min-Chul-
dc.contributor.authorSong, Jin Dong-
dc.contributor.authorChoi, Won Kook-
dc.contributor.authorIm, Seongil-
dc.date.accessioned2024-01-20T05:30:21Z-
dc.date.available2024-01-20T05:30:21Z-
dc.date.created2021-09-03-
dc.date.issued2016-01-
dc.identifier.issn1884-4049-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/124591-
dc.description.abstractLead sulfide (PbS) quantum dots (QDs) have great potential in optoelectronic applications because of their desirable characteristics as a light absorber for near-infrared (NIR) photodetection. However, most PbS-based NIR photodetectors are two-terminal devices, which require an integrated pixel circuit to be practical photosensors. Here we report on PbS QD/indium gallium zinc oxide (InGaZnO, IGZO) metal oxide semiconductor hybrid phototransistors with a photodetection capability between 700 and 1400 nm, a range that neither conventional Si nor InGaAs photodetectors can cover. The new hybrid phototransistor exhibits excellent photoresponsivity of over 106AW-1 and a specific detectivity in the order of 1013 Jones for NIR (1000 nm) light. Furthermore, we demonstrate an NIR (1300 nm) imager using photogating inverter pixels based on PbS/IGZO phototransistors at an imaging frequency of 1 Hz with a high output voltage photogain of similar to 4.9 V (similar to 99%). To the best of our knowledge, this report demonstrates the first QD/metal oxide hybrid phototransistor-based flat panel NIR imager. Our hybrid approach using QD/metal oxide paves the way for the development of gate-tunable and highly sensitive flat panel NIR sensors/imagers that can be easily integrated.-
dc.languageEnglish-
dc.publisherNATURE PUBLISHING GROUP-
dc.subjectTHIN-FILM TRANSISTORS-
dc.subjectCHARGE-TRANSFER-
dc.subjectTRANSPARENT-
dc.subjectPHOTOTRANSISTORS-
dc.subjectPHOTODETECTORS-
dc.subjectGRAPHENE-
dc.subjectPHOTOCONDUCTIVITY-
dc.subjectPHOTOVOLTAICS-
dc.subjectPERFORMANCE-
dc.subjectTRANSPORT-
dc.titleUltrasensitive PbS quantum-dot-sensitized InGaZnO hybrid photoinverter for near-infrared detection and imaging with high photogain-
dc.typeArticle-
dc.identifier.doi10.1038/am.2015.137-
dc.description.journalClass1-
dc.identifier.bibliographicCitationNPG ASIA MATERIALS, v.8-
dc.citation.titleNPG ASIA MATERIALS-
dc.citation.volume8-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.identifier.wosid000368583000001-
dc.identifier.scopusid2-s2.0-85017569090-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalResearchAreaMaterials Science-
dc.type.docTypeArticle-
dc.subject.keywordPlusTHIN-FILM TRANSISTORS-
dc.subject.keywordPlusCHARGE-TRANSFER-
dc.subject.keywordPlusTRANSPARENT-
dc.subject.keywordPlusPHOTOTRANSISTORS-
dc.subject.keywordPlusPHOTODETECTORS-
dc.subject.keywordPlusGRAPHENE-
dc.subject.keywordPlusPHOTOCONDUCTIVITY-
dc.subject.keywordPlusPHOTOVOLTAICS-
dc.subject.keywordPlusPERFORMANCE-
dc.subject.keywordPlusTRANSPORT-
dc.subject.keywordAuthorPbS quantum dot-
dc.subject.keywordAuthorInGaZnO Semiconductor-
dc.subject.keywordAuthorHybrid Phototransistor-
dc.subject.keywordAuthorPhoto Inverter-
dc.subject.keywordAuthorNear Infrared Detection/Imaging-
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