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dc.contributor.authorPark, Chang-Soo-
dc.contributor.authorZhao, Yu-
dc.contributor.authorShon, Yoon-
dc.contributor.authorYoon, Im Taek-
dc.contributor.authorLee, Cheol Jin-
dc.contributor.authorSong, Jin Dong-
dc.contributor.authorLee, Haigun-
dc.contributor.authorKim, Eun Kyu-
dc.date.accessioned2024-01-20T07:04:10Z-
dc.date.available2024-01-20T07:04:10Z-
dc.date.created2021-09-05-
dc.date.issued2015-05-
dc.identifier.issn2050-7526-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/125513-
dc.description.abstractWe report a ferromagnetic graphene field-effect transistor with a band gap. The Mn-doped graphene has a coercive field (H-c) of 188 Oe and a remanent magnetization of 102 emu cm(-3) at 10 K. The temperature-dependent conductivity indicates that the Mn-doped graphene has a band gap of 165 meV. A fabricated graphene FET revealed p-type semiconducting behavior, and the field effect mobility was determined to be approximately 2543 cm(2) V-1 s(-1) at room temperature.-
dc.languageEnglish-
dc.publisherROYAL SOC CHEMISTRY-
dc.subjectGAS-
dc.titleProperties of room-temperature ferromagnetic semiconductor in manganese-doped bilayer graphene by chemical vapor deposition-
dc.typeArticle-
dc.identifier.doi10.1039/c5tc00051c-
dc.description.journalClass1-
dc.identifier.bibliographicCitationJOURNAL OF MATERIALS CHEMISTRY C, v.3, no.17, pp.4235 - 4238-
dc.citation.titleJOURNAL OF MATERIALS CHEMISTRY C-
dc.citation.volume3-
dc.citation.number17-
dc.citation.startPage4235-
dc.citation.endPage4238-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.identifier.wosid000353769300003-
dc.identifier.scopusid2-s2.0-84928539911-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalResearchAreaPhysics-
dc.type.docTypeArticle-
dc.subject.keywordPlusGAS-
dc.subject.keywordAuthormanganese-
dc.subject.keywordAuthorgraphene-
dc.subject.keywordAuthorferromagnetic-
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