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dc.contributor.authorYoo, Hyung Keun-
dc.contributor.authorYoon, Youngwoon-
dc.contributor.authorLee, Kiejin-
dc.contributor.authorKang, Chul-
dc.contributor.authorKee, Chul-Sik-
dc.contributor.authorHwang, In-Wook-
dc.contributor.authorLee, Joong Wook-
dc.date.accessioned2024-01-20T09:31:26Z-
dc.date.available2024-01-20T09:31:26Z-
dc.date.created2022-01-25-
dc.date.issued2014-07-
dc.identifier.issn0003-6951-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/126609-
dc.description.abstractUsing hybrid bilayer systems comprising a molecular organic semiconductor and silicon, we achieve optically controllable active terahertz (THz) modulators that exhibit extremely high modulation efficiencies. A modulation efficiency of 98% is achieved from thermally annealed C-60/silicon bilayers, due to the rapid photo-induced electron transfer from the excited states of the silicon onto the C-60 layer. Furthermore, we demonstrate the broadband modulation of THz waves. The cut-off condition of the system that is determined by the formation of efficient charge separation by the photo-excitation is highly variable, changing the system from insulating to metallic. The phenomenon enables an extremely high modulation bandwidth and rates of electromagnetic waves of interest. The realization of near-perfect modulation efficiency in THz frequencies opens up the possibilities of utilizing active modulators for THz spectroscopy and communications. (C) 2014 AIP Publishing LLC.-
dc.languageEnglish-
dc.publisherAMER INST PHYSICS-
dc.titleHighly efficient terahertz wave modulators by photo-excitation of organics/silicon bilayers-
dc.typeArticle-
dc.identifier.doi10.1063/1.4887376-
dc.description.journalClass1-
dc.identifier.bibliographicCitationAPPLIED PHYSICS LETTERS, v.105, no.1-
dc.citation.titleAPPLIED PHYSICS LETTERS-
dc.citation.volume105-
dc.citation.number1-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.identifier.wosid000339664900015-
dc.identifier.scopusid2-s2.0-84908518376-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.relation.journalResearchAreaPhysics-
dc.type.docTypeArticle-
dc.subject.keywordPlusTIME-DOMAIN SPECTROSCOPY-
dc.subject.keywordPlusTHIN-FILM TRANSISTORS-
dc.subject.keywordPlusDOPED SILICON-
dc.subject.keywordPlusTHZ-
dc.subject.keywordPlusMETAMATERIALS-
dc.subject.keywordPlusTECHNOLOGY-
dc.subject.keywordPlusTRANSITION-
dc.subject.keywordPlusMOBILITY-
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KIST Article > 2014
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