Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Yoo, Hyung Keun | - |
dc.contributor.author | Yoon, Youngwoon | - |
dc.contributor.author | Lee, Kiejin | - |
dc.contributor.author | Kang, Chul | - |
dc.contributor.author | Kee, Chul-Sik | - |
dc.contributor.author | Hwang, In-Wook | - |
dc.contributor.author | Lee, Joong Wook | - |
dc.date.accessioned | 2024-01-20T09:31:26Z | - |
dc.date.available | 2024-01-20T09:31:26Z | - |
dc.date.created | 2022-01-25 | - |
dc.date.issued | 2014-07 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | https://pubs.kist.re.kr/handle/201004/126609 | - |
dc.description.abstract | Using hybrid bilayer systems comprising a molecular organic semiconductor and silicon, we achieve optically controllable active terahertz (THz) modulators that exhibit extremely high modulation efficiencies. A modulation efficiency of 98% is achieved from thermally annealed C-60/silicon bilayers, due to the rapid photo-induced electron transfer from the excited states of the silicon onto the C-60 layer. Furthermore, we demonstrate the broadband modulation of THz waves. The cut-off condition of the system that is determined by the formation of efficient charge separation by the photo-excitation is highly variable, changing the system from insulating to metallic. The phenomenon enables an extremely high modulation bandwidth and rates of electromagnetic waves of interest. The realization of near-perfect modulation efficiency in THz frequencies opens up the possibilities of utilizing active modulators for THz spectroscopy and communications. (C) 2014 AIP Publishing LLC. | - |
dc.language | English | - |
dc.publisher | AMER INST PHYSICS | - |
dc.title | Highly efficient terahertz wave modulators by photo-excitation of organics/silicon bilayers | - |
dc.type | Article | - |
dc.identifier.doi | 10.1063/1.4887376 | - |
dc.description.journalClass | 1 | - |
dc.identifier.bibliographicCitation | APPLIED PHYSICS LETTERS, v.105, no.1 | - |
dc.citation.title | APPLIED PHYSICS LETTERS | - |
dc.citation.volume | 105 | - |
dc.citation.number | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.identifier.wosid | 000339664900015 | - |
dc.identifier.scopusid | 2-s2.0-84908518376 | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalResearchArea | Physics | - |
dc.type.docType | Article | - |
dc.subject.keywordPlus | TIME-DOMAIN SPECTROSCOPY | - |
dc.subject.keywordPlus | THIN-FILM TRANSISTORS | - |
dc.subject.keywordPlus | DOPED SILICON | - |
dc.subject.keywordPlus | THZ | - |
dc.subject.keywordPlus | METAMATERIALS | - |
dc.subject.keywordPlus | TECHNOLOGY | - |
dc.subject.keywordPlus | TRANSITION | - |
dc.subject.keywordPlus | MOBILITY | - |
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