Synthesis of a Photocurable Ladder-like Poly(phenyl-co-mercaptopropyl)silsesquioxane as Gate Dielectric Material
- Authors
- Lee, Albert S.; Baek, Kyung-Youl; Hwang, Seung Sang
- Issue Date
- 2013-09-01
- Publisher
- TAYLOR & FRANCIS LTD
- Citation
- MOLECULAR CRYSTALS AND LIQUID CRYSTALS, v.580, no.1, pp.88 - 94
- Abstract
- A new photocurable ladder-like poly(phenyl-co-mercaptopropyl)silsesquioxane (LPPMPSQ) was synthesized in one pot via base catalyzed hydrolysis-polycondensation of a comonomer mixture of phenyltrimethoxysilane and 3-mercaptopropyltrimethoxysilane. Obtained LPPMPSQ was characterized by H-1 NMR, FT-IR, Si-29 NMR, TGA, and the electrical (k = 3.6) and mechanical properties (surface modulus = 4.9 GPa) found to be suitable for application as a photocurable gate dielectric material.
- Keywords
- dielectric constant; ladder-like; silsesquioxane; gate dielectric
- ISSN
- 1542-1406
- URI
- https://pubs.kist.re.kr/handle/201004/127674
- DOI
- 10.1080/15421406.2013.807720
- Appears in Collections:
- KIST Article > 2013
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