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dc.contributor.authorLee, Seunghun-
dc.contributor.authorTark, Sung Ju-
dc.contributor.authorKim, Chan Seok-
dc.contributor.authorJeong, Dae Young-
dc.contributor.authorLee, Jeong Chul-
dc.contributor.authorKim, Won Mok-
dc.contributor.authorKim, Donghwan-
dc.date.accessioned2024-01-20T12:02:36Z-
dc.date.available2024-01-20T12:02:36Z-
dc.date.created2021-09-05-
dc.date.issued2013-07-
dc.identifier.issn1567-1739-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/127902-
dc.description.abstractIn this study, we present numerical and experimental analyses of the effect of the work function of the transparent conducting oxide (TCO) on the performance of silicon heterojunction solar cells. The simulation results showed that the solar cell performance such as V-oc and FF were strongly affected by the work function of TCO films due to band bending. The experimental analysis was carried out by preparing Zn-In-Sn-O films with varying work function by varying the composition. The compositional dependence of the work function, optical and electronic properties of Zn-In-Sn-O films was examined, and the performance of the silicon heterojunction solar cells with corresponding TCO films was analyzed. The electrical properties and work function in Zn-In-Sn-O films were significantly influenced by Zn content, and Zn-In-Sn-O film with 12.7 at.% Zn content, which had the highest work function and lowest resistivity among the studied films, resulted in the highest conversion efficiency of solar cell due to increased V-oc and FF. It was shown that the behavior of performance parameters in silicone heterojunction solar cells closely correlated with the work function and electrical properties of TCO films. (C) 2013 Published by Elsevier B. V.-
dc.languageEnglish-
dc.publisherELSEVIER-
dc.subjectTRANSPARENT CONDUCTING OXIDES-
dc.subjectAMORPHOUS-SILICON-
dc.subjectTHIN-FILMS-
dc.subjectBARRIER-
dc.titleInfluence of front contact work function on silicon heterojunction solar cell performance-
dc.typeArticle-
dc.identifier.doi10.1016/j.cap.2012.12.013-
dc.description.journalClass1-
dc.identifier.bibliographicCitationCURRENT APPLIED PHYSICS, v.13, no.5, pp.836 - 840-
dc.citation.titleCURRENT APPLIED PHYSICS-
dc.citation.volume13-
dc.citation.number5-
dc.citation.startPage836-
dc.citation.endPage840-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.description.journalRegisteredClasskci-
dc.identifier.kciidART001790736-
dc.identifier.wosid000316600000007-
dc.identifier.scopusid2-s2.0-84875367267-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalResearchAreaPhysics-
dc.type.docTypeArticle-
dc.subject.keywordPlusTRANSPARENT CONDUCTING OXIDES-
dc.subject.keywordPlusAMORPHOUS-SILICON-
dc.subject.keywordPlusTHIN-FILMS-
dc.subject.keywordPlusBARRIER-
dc.subject.keywordAuthorWork function-
dc.subject.keywordAuthorHeterojunction solar cell-
dc.subject.keywordAuthorITO-
dc.subject.keywordAuthorSputter-
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KIST Article > 2013
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