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dc.contributor.authorChoi, Gyung-Min-
dc.contributor.authorMin, Byoung-Chul-
dc.contributor.authorShin, Kyung-Ho-
dc.date.accessioned2024-01-20T12:31:27Z-
dc.date.available2024-01-20T12:31:27Z-
dc.date.created2021-09-05-
dc.date.issued2013-05-
dc.identifier.issn0947-8396-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/128099-
dc.description.abstractWe have studied the L1(0) ordering of FePtB layers assisted by the oxidation-induced stress of a capping layer. In the thermally oxidized Si substrate/MgO/CoFeB/FePtB/ Ti structure, the oxidation of the Ti capping layer during post-deposition annealing exerts an in-plane tensile stress on the FePtB layer, which promotes L1(0) ordering of the FePtB layer. The diffusion of boron from the FePtB layer into the Ti layer also plays a crucial role in the L1(0) ordering. The CoFeB/FePtB composite layers can be used for the top electrode of perpendicular magnetic tunnel junctions.-
dc.languageEnglish-
dc.publisherSPRINGER HEIDELBERG-
dc.titleL1(0) ordering of FePtB layers by oxidation-induced stress of capping layer-
dc.typeArticle-
dc.identifier.doi10.1007/s00339-012-7512-3-
dc.description.journalClass1-
dc.identifier.bibliographicCitationAPPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, v.111, no.2, pp.389 - 394-
dc.citation.titleAPPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING-
dc.citation.volume111-
dc.citation.number2-
dc.citation.startPage389-
dc.citation.endPage394-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.identifier.wosid000319064800008-
dc.identifier.scopusid2-s2.0-84878125918-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalResearchAreaPhysics-
dc.type.docTypeArticle-
dc.subject.keywordPlusTHIN-FILMS-
dc.subject.keywordPlusTUNNEL MAGNETORESISTANCE-
dc.subject.keywordPlusTEXTURE-
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KIST Article > 2013
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