Synthesis of Patched or Stacked Graphene and hBN Flakes: A Route to Hybrid Structure Discovery

Authors
Kim, Soo MinHsu, AllenAraujo, P. T.Lee, Yi-HsienPalacios, TomasDresselhaus, MildredIdrobo, Juan-CarlosKim, Ki KangKong, Jing
Issue Date
2013-03
Publisher
AMER CHEMICAL SOC
Citation
NANO LETTERS, v.13, no.3, pp.933 - 941
Abstract
Two-dimensional (20) materials such as graphene and hexagonal boron nitride (hBN) have attracted significant attention due to their remarkable properties. Numerous interesting graphene/hBN hybrid structures have been proposed but their implementation has been very limited. In this work, the synthesis of patched structures through consecutive chemical vapor deposition (CVD) on the same substrate was investigated. Both in-plane junctions and stacked layers were obtained. For stacked layers, depending on the synthesis sequence, in one case turbostratic stacking with random rotations were obtained. In another, "AA-like", slightly twisted stacking between graphene and hBN was observed with lattice orientation misalignment consistently to be <1 degrees. Raman characterizations not only confirmed that hBN is a superior substrate but also revealed for the first time that a graphene edge with hBN passivation displays reduced D band intensity compared to an open edge. These studies pave the way for the proposed well-ordered graphene/hBN structures and outline exciting future directions for hybrid 2D materials.
Keywords
HEXAGONAL BORON-NITRIDE; SEMICONDUCTOR; ZIGZAG; FILMS; HEXAGONAL BORON-NITRIDE; SEMICONDUCTOR; ZIGZAG; FILMS; Boron nitride; graphene; hybrid; chemical vapor deposition; heterostructure
ISSN
1530-6984
URI
https://pubs.kist.re.kr/handle/201004/128289
DOI
10.1021/nl303760m
Appears in Collections:
KIST Article > 2013
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