Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Shin, Jun-Hwan | - |
dc.contributor.author | Park, Jeong-Woo | - |
dc.contributor.author | Han, Sang-Pil | - |
dc.contributor.author | Debnath, Pulak C. | - |
dc.contributor.author | Song, Yong-Won | - |
dc.contributor.author | Kim, Namje | - |
dc.contributor.author | Ryu, Han-Cheol | - |
dc.contributor.author | Ko, Hyunsung | - |
dc.contributor.author | Park, Kyung Hyun | - |
dc.date.accessioned | 2024-01-20T13:30:24Z | - |
dc.date.available | 2024-01-20T13:30:24Z | - |
dc.date.created | 2022-01-10 | - |
dc.date.issued | 2012-12-24 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | https://pubs.kist.re.kr/handle/201004/128535 | - |
dc.description.abstract | We demonstrated an electromagnetic (EM) wave generation that reaches up to 250 GHz in the photoconductive switch based on randomly networked single-walled carbon nanotubes (SWNTs). Furthermore, we investigated the bias dependence of the electromagnetic wave amplitudes. This subterahertz radiation is generated by the acceleration of photogenerated carriers through fluctuation-induced tunneling in single-walled carbon nanotube bundles. Below the bias field of 20 kV/cm, the signal was enhanced with an increase in the bias field. However, the signal amplitudes decreased above 20 kV/cm due to emerging space-charge accumulation and scattering effect occurring at the defects and contact points. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4773487] | - |
dc.language | English | - |
dc.publisher | AMER INST PHYSICS | - |
dc.subject | ELECTRONIC-STRUCTURE | - |
dc.subject | SPECTROSCOPY | - |
dc.subject | TRANSISTOR | - |
dc.subject | EXCITATION | - |
dc.subject | CONDUCTION | - |
dc.title | Subterahertz electromagnetic wave generation in a randomly networked single-walled carbon nanotubes photoconductive switch | - |
dc.type | Article | - |
dc.identifier.doi | 10.1063/1.4773487 | - |
dc.description.journalClass | 1 | - |
dc.identifier.bibliographicCitation | APPLIED PHYSICS LETTERS, v.101, no.26 | - |
dc.citation.title | APPLIED PHYSICS LETTERS | - |
dc.citation.volume | 101 | - |
dc.citation.number | 26 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.identifier.wosid | 000312830700019 | - |
dc.identifier.scopusid | 2-s2.0-84871802645 | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalResearchArea | Physics | - |
dc.type.docType | Article | - |
dc.subject.keywordPlus | ELECTRONIC-STRUCTURE | - |
dc.subject.keywordPlus | SPECTROSCOPY | - |
dc.subject.keywordPlus | TRANSISTOR | - |
dc.subject.keywordPlus | EXCITATION | - |
dc.subject.keywordPlus | CONDUCTION | - |
dc.subject.keywordAuthor | terahertz generation | - |
dc.subject.keywordAuthor | carbon nanotube | - |
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