Full metadata record
DC Field | Value | Language |
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dc.contributor.author | Getmanenko, Yulia A. | - |
dc.contributor.author | Purcell, Thomas A. | - |
dc.contributor.author | Hwang, Do Kyung | - |
dc.contributor.author | Kippelen, Bernard | - |
dc.contributor.author | Marder, Seth R. | - |
dc.date.accessioned | 2024-01-20T13:30:45Z | - |
dc.date.available | 2024-01-20T13:30:45Z | - |
dc.date.created | 2021-09-05 | - |
dc.date.issued | 2012-12-07 | - |
dc.identifier.issn | 0022-3263 | - |
dc.identifier.uri | https://pubs.kist.re.kr/handle/201004/128553 | - |
dc.description.abstract | A new core, 4H-diselenopheno[3,2-b:2',3'-d]-pyrrole (DSP), was reacted with tetracyanoethylene, and three products, mono-tricyanovinyl, bis-tricyanovinyl, and quinoidal, were isolated and compared with the respective 4H-dithieno-[3,2-b:2',3'-d]pyrrole (DTP) derivatives using cyclic voltammetry, UV-vis absorption, and differential scanning calorimetry analyses. Organic field-effect transistors were fabricated using solution-processed films, and only one derivative, bis-tricyanovinyl-DSP, exhibited transistor behavior with mu(e) reaching 8.7 X 10(-4) cm(2)/V.s. This enhancement of the electron-transporting properties in comparison with DTP derivative is attributed to stronger LUMO-LUMO interaction due to a larger size of selenium atom, which in the case of the bis-tricyanovinyl derivative, has wave function density on the chalcogen. | - |
dc.language | English | - |
dc.publisher | AMER CHEMICAL SOC | - |
dc.subject | FIELD-EFFECT TRANSISTORS | - |
dc.subject | DESIGN | - |
dc.title | Easily Reducible Materials from the Reactions of Diselenopheno[3,2-b:2 ',3 '-d]pyrrole and Dithieno[3,2-b:2 ',3 '-d]pyrrole with Tetracyanoethylene | - |
dc.type | Article | - |
dc.identifier.doi | 10.1021/jo3020006 | - |
dc.description.journalClass | 1 | - |
dc.identifier.bibliographicCitation | JOURNAL OF ORGANIC CHEMISTRY, v.77, no.23, pp.10931 - 10937 | - |
dc.citation.title | JOURNAL OF ORGANIC CHEMISTRY | - |
dc.citation.volume | 77 | - |
dc.citation.number | 23 | - |
dc.citation.startPage | 10931 | - |
dc.citation.endPage | 10937 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.identifier.wosid | 000311926100049 | - |
dc.identifier.scopusid | 2-s2.0-84870949837 | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Organic | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.type.docType | Article | - |
dc.subject.keywordPlus | FIELD-EFFECT TRANSISTORS | - |
dc.subject.keywordPlus | DESIGN | - |
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