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dc.contributor.authorKim, Se Hyun-
dc.contributor.authorJang, Mi-
dc.contributor.authorKim, Jiye-
dc.contributor.authorChoi, Harim-
dc.contributor.authorBaek, Kyung-Youl-
dc.contributor.authorPark, Chan Eon-
dc.contributor.authorYang, Hoichang-
dc.date.accessioned2024-01-20T14:01:05Z-
dc.date.available2024-01-20T14:01:05Z-
dc.date.created2021-09-05-
dc.date.issued2012-10-
dc.identifier.issn0959-9428-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/128815-
dc.description.abstractPhoto and temperature cured polymer dielectrics could be fabricated on a gate-patterned glass, with two immiscible polymer precursors, divinyltetramethyldisiloxane-bis(benzocyclobutene) (BCB precursor) and poly(melamine-co-formaldehyde)acrylate (PMFA), which have excellent insulating properties, but show discernible dielectric constants and polarities. On hydrophobic BCB-assisted PMFA blend dielectrics (approximately 400 nm thick), organic field-effect transistors (OFET) and complementary inverters were demonstrated using pentacene and N,N'-ditridecylperylene-3,4,9,10-tetracarboxylic diimide (PTCDI-C13) as semiconducting channels. The values of field-effect mobilities showed up to 0.33 cm(2) V-1 s(-1) (for pentacene) and 0.85 cm(2) V-1 s(-1) (for PTCDI-C13), respectively. In addition, these based complementary inverter was successfully demonstrated with a high voltage gain of ca. 41, specifically, onto the 10 wt% BCB-assisted PMFA dielectric optimized to achieve a hydrophobic and smooth surface by vertically phase-separating the immiscible polymers.-
dc.languageEnglish-
dc.publisherROYAL SOC CHEMISTRY-
dc.subjectFIELD-EFFECT TRANSISTORS-
dc.subjectPENTACENE THIN-FILMS-
dc.subjectGATE-DIELECTRICS-
dc.subjectSURFACE-ENERGY-
dc.subjectPERFORMANCE-
dc.subjectNANOSTRUCTURES-
dc.subjectMORPHOLOGY-
dc.subjectSTABILITY-
dc.subjectTRANSPORT-
dc.subjectELECTRON-
dc.titleComplementary photo and temperature cured polymer dielectrics with high-quality dielectric properties for organic semiconductors-
dc.typeArticle-
dc.identifier.doi10.1039/c2jm33203e-
dc.description.journalClass1-
dc.identifier.bibliographicCitationJOURNAL OF MATERIALS CHEMISTRY, v.22, no.37, pp.19940 - 19947-
dc.citation.titleJOURNAL OF MATERIALS CHEMISTRY-
dc.citation.volume22-
dc.citation.number37-
dc.citation.startPage19940-
dc.citation.endPage19947-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.identifier.wosid000308099900076-
dc.identifier.scopusid2-s2.0-84865733646-
dc.relation.journalWebOfScienceCategoryChemistry, Physical-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalResearchAreaChemistry-
dc.relation.journalResearchAreaMaterials Science-
dc.type.docTypeArticle-
dc.subject.keywordPlusFIELD-EFFECT TRANSISTORS-
dc.subject.keywordPlusPENTACENE THIN-FILMS-
dc.subject.keywordPlusGATE-DIELECTRICS-
dc.subject.keywordPlusSURFACE-ENERGY-
dc.subject.keywordPlusPERFORMANCE-
dc.subject.keywordPlusNANOSTRUCTURES-
dc.subject.keywordPlusMORPHOLOGY-
dc.subject.keywordPlusSTABILITY-
dc.subject.keywordPlusTRANSPORT-
dc.subject.keywordPlusELECTRON-
dc.subject.keywordAuthorOTFT-
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