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dc.contributor.authorKweon, Soon C.-
dc.contributor.authorOh, In-Hwan-
dc.contributor.authorLee, Joong Kee-
dc.contributor.authorKhodin, Aliaksandr A.-
dc.date.accessioned2024-01-20T14:02:07Z-
dc.date.available2024-01-20T14:02:07Z-
dc.date.created2021-09-05-
dc.date.issued2012-09-15-
dc.identifier.issn0167-577X-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/128868-
dc.description.abstractC-60/SnO2 heterostructure interface potential barrier is analyzed in conditions of the lithium ions' first charging. The controlled supply of electrons from SnO2 through the potential barrier could influence the Li + C-60 and Li + SnO2 interaction. High electric field (>10(5) V cm(-1)) of the interface barrier could impact the overall Li ions' diffusion/drift through the interface. Enhanced SnO2 grain boundary transport of Li ions, drawn in through the C-60/SnO2 interface potential barrier, could improve Li ions diffusivity in tin oxide and charging efficiency of the cell. (C) 2012 Elsevier B.V. All rights reserved.-
dc.languageEnglish-
dc.publisherELSEVIER SCIENCE BV-
dc.subjectELECTROCHEMICAL CHARACTERISTICS-
dc.subjectSURFACE-
dc.titleFullerite/tin oxide interface barriers in a lithium-ion secondary cell-
dc.typeArticle-
dc.identifier.doi10.1016/j.matlet.2012.05.103-
dc.description.journalClass1-
dc.identifier.bibliographicCitationMATERIALS LETTERS, v.83, pp.88 - 90-
dc.citation.titleMATERIALS LETTERS-
dc.citation.volume83-
dc.citation.startPage88-
dc.citation.endPage90-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.identifier.wosid000308118500026-
dc.identifier.scopusid2-s2.0-84864128725-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalResearchAreaPhysics-
dc.type.docTypeArticle-
dc.subject.keywordPlusELECTROCHEMICAL CHARACTERISTICS-
dc.subject.keywordPlusSURFACE-
dc.subject.keywordAuthorEnergy storage and conversion-
dc.subject.keywordAuthorSemiconductors-
dc.subject.keywordAuthorFullerenes-
dc.subject.keywordAuthorInterfaces-
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